2SD1060

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1060 DESCRIPTION ・With TO-220 package ・Low collector-emitter saturation voltage ・Complement to type 2SB824 APPLICATIONS ・Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 60 50 6 5 9 30 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCBO VEBO VCEsat ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=1mA ;RBE=∞ IC=1mA ;IE=0 IE=1mA ;IC=0 IC=3A; IB=0.3A VCB=40V;IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=3A ; VCE=2V IE=0 ; VCB=10V;f=1MHz IC=1A ; VCE=-5V 70 30 100 30 MIN 50 60 6 TYP. 2SD1060 MAX UNIT V V V 0.4 0.1 0.1 280 V mA mA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=2.0A; IB1= IB2=0.2A 0.1 1.4 0.2 μs μs μs hFE-1 classifications Q 70-140 R 100-200 S 140-280 JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1060 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1060 JMnic