2SD1062

Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SB826 ・Wide area of safe operation APPLICATIONS ・Relay drivers, ・High-speed inverters, ・Converters ・General high-current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SD1062 Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 60 50 6 12 15 40 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=∞ IC=1mA ;IE=0 IE=1mA ;IC=0 IC=6A, IB=0.3A VCB=40V;IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=5A ; VCE=2V IC=1A ; VCE=5V 70 30 10 MIN 50 60 6 TYP. 2SD1062 MAX UNIT V V V 0.4 0.1 0.1 280 V mA mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=5.0A IB1=- IB2=0.5A 0.10 0.05 1.20 μs μs μs hFE-1 classifications Q 70-140 R 100-200 S 140-280 JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1062 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) JMnic