2SD1193

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1193 DESCRIPTION ・With TO-3PN package ・Complement to type 2SB883 ・High DC current gain ・High current capacity and wide ASO ・Low saturation voltage APPLICATIONS ・Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector MAX 70 60 6 15 20 70 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCBO VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;RBE=∞ IC=5mA ;IE=0 IC=7A ;IB=14mA IC=7A ;IB=14mA VCB=40V; IE=0 VEB=5V; IC=0 IC=7A ; VCE=2V IC=7A ; VCE=5V 2000 20 MIN 70 60 TYP. 2SD1193 MAX UNIT V V 1.5 2.0 0.1 3 V V mA mA MHz JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1193 Fig.2 outline dimensions JMnic