2SD1197

Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High DC current gain. ・Large current capacity and wide ASO. ・Low saturation voltage. APPLICATIONS ・Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SD1197 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 110 100 6 10 15 70 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1197 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCBO VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Collector-base saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;RBE=∞ IC=5mA ;IE=0 IC=5A; IB=10mA IC=5A; IB=10mA VCB=80V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=3V IC=5A ; VCE=5V 1500 4000 20 MHz MIN 100 110 1.0 1.5 2.0 0.1 3.0 TYP. MAX UNIT V V V V mA mA JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1197 Fig.2 outline dimensions JMnic