2SD1274B

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1274 2SD1274A 2SD1274B DESCRIPTION ・With TO-220Fa package ・High VCBO ・High speed switching APPLICATIONS ・Power amplifier applicaitons PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol ・ ABSOLUTE MAXIMUM RATINGS AT Tc=25℃ SYMBOL PARAMETER 2SD1274 VCBO Collector-base voltage 2SD1274A 2SD1274B VCEO VEBO IC Collector-emitter voltage Emitter-base voltage Collector current (DC) TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ Open base Open collector Open emitter CONDITIONS VALUE 150 200 250 80 6 5 40 W V V A V UNIT JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VEBO VCEsat VBE PARAMETER Collector-emitter sustaining voltage Emitter-base voltage Collector-emitter saturation voltage Base-emitter voltage 2SD1274 ICBO Collector cut-off current 2SD1274A 2SD1274B IEBO hFE fT tf Emitter cut-off current DC current gain Transition frequency Fall time 2SD1274 2SD1274A 2SD1274B CONDITIONS IC=0.2A, L=25mH IE=1mA, IC=0 IC=5A; IB=1A IC=5A ; VCE=4V VCB=150V; IE=0 VCB=200V; IE=0 VCB=250V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=4V IC=0.5A ; VCE=10V IC=5A ;IB1=0.8A VEB=-5V MIN 80 6 TYP. MAX UNIT V V 1.6 1.5 V V 1 mA 50 14 40 1.0 μA MHz μs JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1274 2SD1274A 2SD1274B Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) JMnic