2SD1294

Product Specification www.jmnic.com Silicon Power Transistors 2SD1294 DESCRIPTION ・With TO-3P(I) package ・Included avalanche diode ・High DC current gain ・Darlington connected type APPLICATIONS ・Power regulator for line operated TV PINNING PIN 1 2 3 Base Collector;connected to mounting base emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION LIMITING VALUES SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 60±15 60±15 6 5 20 80 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCBO VCEsat-1 VCEsat-2 VBE IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Emitter-base on voltage Emitter cut-off current DC current gain CONDITIONS IC=100mA ;IB=0 IC=100mA ;IE=0 IC=0.5A ;IB=1mA IC=1A; IB=1mA IC=0.5A;VCE=5V VEB=6V; IC=0 IC=0.5A ; VCE=5V 2000 MIN 45 45 TYP. 2SD1294 MAX 75 75 1.5 2.5 1.8 0.1 20000 UNIT V V V V V mA JMnic Product Specification www.jmnic.com Silicon Power Transistors PACKAGE OUTLINE 2SD1294 Fig.2 outline dimentions JMnic