2SD1296

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1296 DESCRIPTION ・With TO-3PN package ・High DC current gain ・Low saturation voltage APPLICATIONS ・For audio frequency power amplifier and low speed high current switching industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PT Total power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 3.0 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector MAX 150 100 8 15 30 100 W UNIT V V V A A JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=30mA ;IB=0 IC=15A ;IB=30mA IC=15A ;IB=30mA VCB=100V; IE=0 VEB=5V; IC=0 IC=15A ; VCE=2V 1000 MIN 100 TYP. 2SD1296 MAX UNIT V 1.5 2.2 10 5 30000 V V μA mA Switching times ton tstg tf Turn-on time Storage time Fall time IC=15A; IB1=-IB2=30mA VCC≈60V;RL=4Ω 1.0 5.0 2.0 μs μs μs hFE Classifications M 1000-3000 L 2000-5000 K 4000-10000 J 8000-30000 JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1296 Fig.2 outline dimensions JMnic