2SD1409

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1409 DESCRIPTION ・With TO-220F package ・High DC current gain ・Monolithic construction with built-in base-emitter shunt resistor APPLICATIONS ・Igniter applications ・High volitage switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2.0 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 600 400 5 6 1 25 W UNIT V V V A A JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1409 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat VBEsat VECF ICBO IEBO hFE-1 hFE-2 COB PARAMETER Collector-emitter voltage Collector-emitter saturation voltage Base-emitter saturation voltage Emitter-collector forward voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance CONDITIONS IC=10mA; IB=0 IC=4A ;IB=0.04A IC=4A ;IB=0.04A IE=4A; IB=0 VCB=100V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=2V IC=4A ; VCE=2V f=1MHz ; VCB=50V;IE=0 600 100 35 pF MIN 400 2.0 2.5 3.0 0.5 3 TYP. MAX UNIT V V V V mA mA Switching times ton tstg tf Turn-on time Storage time Fall time IB1=-IB2=0.04A VCC=100V ,RL=25Ω 1 8 5 μs μs μs JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1409 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) JMnic