2SD1585

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1585 DESCRIPTION ・With TO-220Fa package ・VCEO≥60V;VEBO≥7V;IC(DC)≤3.0A ・Complement to type 2SB1094 APPLICATIONS ・For use in audio frequency power amplifier and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature Ta=25℃ TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 60 60 7 3 5 0.6 2.0 15 150 -55~150 UNIT V V V A A A W W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=30mA; IB=0 IC=2A IB=0.2A IC=2A IB=0.2A VCB=60V; IE=0 VEB=7V; IC=0 IC=50mA ; VCE=5V IC=0.5A ; VCE=5V IC=0.1A; VCE=5V f=1MHz ; VCB=10V 20 40 16 48 MIN 60 TYP. 2SD1585 MAX UNIT V 1.5 2.0 10 10 V V μA μA 200 MHz pF hFE-2 Classifications M 40-80 L 60-120 K 100-200 JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1585 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) JMnic