2SD1589

Product Specification www.jmnic.com Silicon Power Transistors 2SD1589 DESCRIPTION ・With TO-220Fa package ・DARLINGTON ・Complement to type 2SB1098 ・Low speed switching APPLICATIONS ・Low frequency power amplifier ・Low speed switching industrial use PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol ・ ABSOLUTE MAXIMUM RATINGS AT Tc=25℃ SYMBOL VCBO VCEO VEBO IC ICM IB PC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) Collector power dissipation Collector power dissipation Junction temperature Storage temperature Ta=25℃ TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 150 100 7 5 8 0.5 1.5 20 150 -55~150 V A A A W W ℃ ℃ UNIT V JMnic Product Specification www.jmnic.com Silicon Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.1A , IB=0 IC=3A IB=3mA IC=3A IB=3mA VCB=100V IE=0 IC=3A ; VCE=2V IC=5A ; VCE=2V 2000 500 MIN 60 TYP. 2SD1589 MAX UNIT V 1.5 2.0 1 15000 V V μA Switching times ton ts tf Turn-on time Storage time Fall time IC=3A ;IB1=3mA IB2=-3mA; VCC≈50V RL=16.7Ω 1.0 3.5 1.2 μs μs μs hFE Classifications R 2000-5000 O 3000-7000 Y 5000-15000 JMnic Product Specification www.jmnic.com Silicon Power Transistors PACKAGE OUTLINE 2SD1589 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) JMnic