2SD1591

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1591 DESCRIPTION ・With TO-220Fa package ・DARLINGTON ・Complement to type 2SB1100 APPLICATIONS ・Low frequency power amplification ・Low speed power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol ・ ABSOLUTE MAXIMUM RATINGS AT Tc=25℃ SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) Ta=25℃ Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 150 100 7 10 15 0.5 2 W 30 150 -55~150 ℃ ℃ V A A A UNIT V JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A ; IB=0 IC=10A; IB=25mA IC=10A; IB=25mA VCB=100V; IE=0 VCE=100V; IE=0 VEB=7V ;IC=0 IC=10A ; VCE=2V 1000 MIN 100 TYP. 2SD1591 MAX UNIT V 1.5 2.0 10 500 5 30000 V V μA μA mA JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1591 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) JMnic