2SD1638

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1638 DESCRIPTION ・ ・With TO-126 package ・DARLINGTON APPLICATIONS ・For low frequency and power amplifier applications PINNING(see Fig.2) PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 100 100 5 2 10 150 -55~150 UNIT V V V A W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat VBEsat ICEO ICBO IEBO hFE COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance CONDITIONS IC=25mA; IB=0 IC=1.0A ;IB=1mA IC=1.0A ;IB=1mA VCE=100V; IB=0 VCB=100V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=2V f=0.1MHz ; VCB=10V 1000 25 MIN 100 TYP. 2SD1638 MAX UNIT V 1.5 2.0 0.5 10 3 10000 V V mA μA mA pF JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1638 Fig.2 Outline dimensions JMnic