2SD1895

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors DESCRIPTION ・With TO-3PFa package ・Optimum for 90W HiFi output ・High foward current transfer ratio hFE ・Low collector-emitter saturation voltage ・Complement to type 2SB1255 APPLICATIONS ・Power amplification PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1895 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ Collector power dissipation 3 Junction temperature Storage temperature 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 160 140 5 15 8 100 W UNIT V V V A A JMnic Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD1895 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE -2 fT PARAMETER Collector-emitter voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=30mA ; IB=0 IC=7A ;IB=7mA IC=7A ;IB=7mA VCB=160V; IE=0 VCE=140V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz 2000 5000 20 30000 MHz MIN 140 2.5 3.0 100 100 100 TYP. MAX UNIT V V V μA μA μA Switching times ton tstg tf Turn-on time Storage time Fall time IC=7A; VCC=50V IB1=-IB2=7mA 2.0 6.0 1.2 μs μs μs hFE-2 classifications Q 5000-15000 P 8000-30000 JMnic Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors PACKAGE OUTLINE 2SD1895 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) JMnic