2SD2061

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2061 DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Excellent DC current gain characteristics ・Wide safe operating area APPLICATIONS ・For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector emitter Fig.1 simplified outline (TO-220Fa) and symbol ・ ABSOLUTE MAXIMUM RATINGS AT Tc=25℃ SYMBOL VCBO VCEO VEBO IC ICM PC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Collector power dissipation Collector power dissipation Junction temperature Storage temperature TC=25℃ Ta=25℃ CONDITIONS Open emitter Open base Open collector VALUE 80 60 5 3 6 30 2 150 -55~150 UNIT V V V A A W W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2061 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCBO VEBO VCEsat VBEsat ICBO IEBO hFE fT Cob PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA , IB=0 IC=50μA , IE=0 IE=50μA , IC=0 IC=2A IB=0.2A IC=2A IB=0.2A VCB=60V IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=5V IC=0.5A ; VCE=5V IE=0 ; VCB=10V ,f=1MHz 100 8 70 MIN 60 80 5 1.0 1.5 10 10 320 MHz Pf TYP. MAX UNIT V V V V V μA μA JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2061 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) JMnic