2SD2093

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2093 DESCRIPTION ・With TO-3PML package ・DARLINGTON ・Complement to type 2SB1388 ・High DC current gain ・Low saturation voltage ・Large current capacity and large ASO APPLICATIONS ・Motor drivers ・Printer hammer drivers ・Relay drivers, ・Voltage regulator control PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Maximum absolute ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ Collectorl power dissipation 3.0 Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 110 100 6 10 15 45 W UNIT V V V A A jh Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2093 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat VCEO(BR) VCBO(BR) IEBO ICBO hFE fT PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter cut-off current Collector cut-off current DC current gain Transition frequency CONDITIONS IC=5A;IB=10m A IC=5A;IB=10m A IC=5mA;IB=0 IC=50mA;RBE=∞ VEB=5V; IC=0 VCB=80V; IE=0 IC=5 A ; VCE=3V IC=5 A ; VCE=5V 1500 4000 20 MHz 110 100 3.0 0.1 MIN TYP. 0.9 2.0 MAX UNIT V V V V mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=5A IB1=-IB2=10mA VCC=50V ,RL=10Ω 0.6 4.8 1.6 μs μs μs 2 Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2093 Fig.2 Outline dimensions 3