2SD2095

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2095 DESCRIPTION ・With TO-3P(H)IS package ・Built-in damper diode ・High voltage ,high speed ・Low collector saturation voltage APPLICATIONS ・For color TV horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ・ ABSOLUTE MAXIMUM RATINGS AT Tc=25℃ SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 5 2.5 50 150 -55~150 V A A W ℃ ℃ UNIT V i Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VEBO VCEsat VBEsat ICBO hFE fT COB VF tf PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Diode forward voltage Fall time CONDITIONS IE=200mA , IC=0 IC=3.5A; IB=0.8A IC=3.5A; IB=0.8A VCB=500V; IE=0 IC=1A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IF=5A ICP=3.5A ;IB1(end)=0.8A 8 3 105 1.6 0.5 MIN 5 3.0 TYP. 2SD2095 MAX UNIT V 5.0 1.5 10 V V μA MHz pF 2.0 1.0 V μs 2 Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2095 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3