2SD2101

Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・DARLINGTON APPLICATIONS ・ Low frequency power amplifier PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD2101 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 W ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 200 200 7 10 15 30 UNIT V V V A A W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2101 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VEBO VCBO VCEO VCEO(sus) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 ICBO ICEO hFE PARAMETER Base-emitter voltage Collector-base voltage Collector-emitter voltage Base-emitter voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IE=50mA; IC=0 IC=0.1mA; IC=0 IC=25mA;RBE=∞ IC=5A; L=5mH IC=5A ;IB=10mA IC=10A ;IB=100mA IC=5A ;IB=10mA IC=10A ;IB=100mA VCB=180V; IE=0 VCE=180V; RBE=∞ IC=5A ; VCE=3V 1500 MIN 7 200 200 170 1.5 3.0 2.0 3.5 10 50 TYP. MAX UNIT V V V V V V V V μA μA JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2101 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) JMnic