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2SD2495

2SD2495

  • 厂商:

    JMNIC

  • 封装:

  • 描述:

    2SD2495 - Silicon NPN Darlington Power Transistors - Quanzhou Jinmei Electronic Co.,Ltd.

  • 数据手册
  • 价格&库存
2SD2495 数据手册
Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2495 DESCRIPTION ・With TO-220F package ・Complement to type 2SB1626 APPLICATIONS ・For audio,series regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 110 110 5 6 1 30 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat VBEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=5A; IB=5mA IC=5A; IB=5mA VCB=110V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=4V IC=0.5A ; VCE=12V f=1MHz;VCB=10V 5000 60 55 MIN 110 TYP. 2SD2495 MAX UNIT V 2.5 3.0 0.1 0.1 V V mA mA MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=5A; IB1=-IB2=5mA VCC=30V ,RL=6Ω 0.8 6.2 1.1 μs μs μs hFE Classifications O 5000-12000 p 6500-20000 Y 15000-30000 JMnic Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors PACKAGE OUTLINE 2SD2495 Fig.2 Outline dimensions JMnic
2SD2495 价格&库存

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