2SD401

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD401 DESCRIPTION ・With TO-220C package ・Complement to type 2SB546 ・Collector current IC=2A ・Collector-base voltage VCBO=200V APPLICATIONS ・For use in general purpose power amplifier,vertical output application PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collectorl power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 200 150 5 2 25 150 -55~150 UNIT V V V A W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCBO VEBO VCEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IC=0.5mA; IE=0 IE=0.5mA; IB=0 IC=500m A;IB=50m A VCB=150V; IE=0 VEB=5V; IC=0 IC=0.4A ; VCE=10V IC=0.4A ; VCE=10V 40 5 MIN 150 200 5 TYP. 2SD401 MAX UNIT V V V 1.0 50 50 400 V μA μA MHz hFE classifications R 40-80 O 70-140 Y 120-240 G 200-400 JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD401 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD401 JMnic