2SD401A

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD401A DESCRIPTION ・With TO-220C package ・Complement to type 2SB546A ・Collector current IC=2A ・Collector-collector voltage:VCEO=150V(Min) APPLICATIONS ・For use in general purpose power amplifier, vertical output application PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 200 150 5 2 3 25 150 -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rθjc CHARACTERISTICS Thermal resistance junction to case MAX 5.0 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IC=0.5mA; IE=0 IE=0.5mA; IB=0 IC=500m A;IB=50m A VCB=150V; IE=0 VEB=5V; IC=0 IC=0.4A ; VCE=10V IC=0.4A ; VCE=10V;f=1MHz 40 5 MIN 150 200 5 TYP. 2SD401A MAX UNIT V V V 1.0 50 50 200 V μA μA MHz hFE classifications M 40-80 L 60-120 K 100-200 JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD401A Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) JMnic