2SD525

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD525 DESCRIPTION ・With TO-220C package ・Complement to type 2SB595 ・High breakdown voltage :VCEO=100V ・Low collector saturation volage : VCE(sat)=2.0V(Max) APPLICATIONS ・Power amplifier applications ・Recommend for 30W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC IE IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Base current Collectorl power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 100 100 5 5 5 0.5 40 150 -55~150 UNIT V V V A A A W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VEBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Emitter-base voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IE=10mA; IC=0 IC=4A;IB=0.4 A IC=1A ; VCE=5V VCB=100V IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V IC=1A ; VCE=5V IE=0; VCB=10V;f=1MHz 40 20 12 100 MIN 100 5 TYP. 2SD525 MAX UNIT V V 2.0 1.5 100 1 240 V V μA mA MHz pF hFE-1 classifications R 40-80 O 70-140 Y 120-240 JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD525 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) JMnic