2SD798

Product Specification www.jmnic.com Silicon Power Transistors 2SD798 DESCRIPTION ・DARLINGTON ・High voltage ・With TO-220 package APPLICATIONS ・With switching and igniter applications PINNING PIN 1 2 3 Base DESCRIPTION Collector;connected to mounting base emitter Fig.1 simplified outline (TO-220) and symbol LIMITING VALUES SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector MAX 600 300 5 6 1 30 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance CONDITIONS IC=0.5A ;L=40mH IC=4A IB=0.04A IC=4A IB=0.04A VCB=600V IE=0 VEB=5V; IC=0 IC=2A ; VCE=2V IC=4A ; VCE=2V f=1MHz;VCB=50V 1500 200 35 MIN 300 TYP. 2SD798 MAX UNIT V 2.0 2.5 0.5 0.5 V V mA mA pF JMnic Product Specification www.jmnic.com Silicon Power Transistors 2SD798 PACKAGE OUTLINE Fig.2 Outline dimensions JMnic