BD680

Power Transistors www.jmnic.com BD680 Silicon PNP Transistors Features With TO-126 package In monolithic Darlington configuration This transistor is intended for use in medium power linar and switching applications Complement to type BD679 ECB Absolute Maximum Ratings Tc=25 SYMBOL VCBO VCEO VCER VEB IB IC PD Tj Tstg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Emitter to base voltage Base Current Collector current-Continuous Total Power Dissipation@TC=25 Junction temperature Storage temperature 4 40 150 -55~150 A W 5 V RATING 80 80 UNIT V V TO-126 Electrical Characteristics Tc=25 SYMBOL VCEO(SUS) VCBO ICEO ICBO IEBO VEBO VCE(sat-1) VCE(sat-2) VCE(sat-3) hFE-1 hFE-2 VBE(sat-1) VBE(sat-2) fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Base Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Emitter Cutoff Current Collector-emitter saturation voltages Collector-emitter saturation voltages Collector-emitter saturation voltages Forward current transfer ratio Forward current transfer ratio Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Product IC=1.5A; VCE=3V 750 IC=1.5A; IB=30mA 2.5 V VCE=40V; IB=0 VCB=80V; IE=0 VEB=5V; IC=0 500 200 2 uA uA mA CONDITIONS IC=50mA; IB=0 MIN 80 MAX UNIT V