BD810

Power Transistors www.jmnic.com BD810 Silicon PNP Transistors Features ﹒Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ﹒With TO-220 package BCE Absolute Maximum Ratings Tc=25 SYMBOL VCBO VCEO VEBO IB IC PC Tj Tstg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Base collector current Collector current Collector power dissipation Junction temperature Storage temperature RATING 80 80 5.0 6.0 10 90 150 -55~150 UNIT V V V A A W TO-220 Electrical Characteristics Tc=25 SYMBOL ICBO IEBO ICEO VCBO V(BR)ceo VEBO VCE(sat-1) VCE(sat-2) hFE-1 hFE-2 hFE-3 VBE(on)1 VBE(on)2 fT Cob PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltages Collector-emitter saturation voltages Forward current transfer ratio Forward current transfer ratio Forward current transfer ratio Base-emitter on voltages Base-emitter on voltages Transition frepuency Output Capacitance VCE=10V ;IC=1A;f=1MHz 1.5 MHz IC=4A; VCE=2V 1.6 V IC=2A; VCE=2V IC=4A; VCE=2V 30 15 IC=3A; IB=0.3A 1.1 V IC=0.1A; IB=0 80 V CONDITIONS VCB=80V; IE=0 VEB=5.0V; IC=0 MIN TYPE MAX 1.0 2.0 UNIT mA mA