BD895

Power Transistors www.jmnic.com BD895 Silicon PNP Transistors Features ﹒With TO-220 package ﹒With general-purpose and amplifier applications BCE Absolute Maximum Ratings Tc=25 SYMBOL VCBO VCEO VEBO IB IC PC Tj Tstg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Base collector current Collector current Collector power dissipation Junction temperature Storage temperature 8.0 70 150 -55~150 A W RATING 45 45 5.0 UNIT V V V TO-220 Electrical Characteristics Tc=25 SYMBOL ICBO IEBO ICEO VCBO V(BR)ceo VEBO VCE(sat-1) VCE(sat-2) hFE-1 hFE-2 hFE-3 VBE(on)1 VBE(on)2 fT Cob PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltages Collector-emitter saturation voltages Forward current transfer ratio Forward current transfer ratio Forward current transfer ratio Base-emitter on voltages Base-emitter on voltages Transition frepuency Output Capacitance IC=3A; VCE=3V 2.5 V IC=3A; VCE=3V 750 IC=3A; IB=12mA 2.5 V IC=0.1A; IB=0 45 V CONDITIONS VCB=45V; IE=0 VEB=5.0V; IC=0 VCE=45V; IB=0 MIN TYPE MAX 0.2 2.0 0.5 UNIT mA mA mA