Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD910 BD912
DESCRIPTION ・With TO-220C package ・Complement to type BD909 BD911 APPLICATIONS ・Intented for use in power linear and switching applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
・
Absolute maximum ratings (Ta=25℃)
SYMBOL VCBO PARAMETER BD910 Collector-base voltage BD912 BD910 VCEO Collector-emitter voltage BD912 VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC≤25℃ Open collector Open base -100 -5 -15 -5 90 150 -65~150 V A A W ℃ ℃ Open emitter -100 -80 V CONDITIONS VALUE -80 V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.4 UNIT ℃/W
f
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD910 BD912
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER BD910 IC=-0.1A; IB=0 BD912 IC=-5 A;IB=-0.5 A IC=-10A;IB=-2.5 A IC=-10A;IB=-2.5 A IC=-5A ; VCE=-4V BD910 ICBO Collector cut-off current BD912 BD910 ICEO Collector cut-off current BD912 IEBO hFE-1 hFE-2 hFE-3 fT Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency VCE=-50V; IB=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-4V IC=-5A ; VCE=-4V IC=-10A ; VCE=-4V IC=-0.5A ; VCE=-4V 40 15 5 3 MHz -1.0 250 150 mA VCB=-80V; IE=0 TC=25℃ VCB=-100V; IE=0 TC=25℃ VCE=-40V; IB=0 -1.0 mA -100 -1.0 -3.0 -2.5 -1.5 -0.5 -5.0 -0.5 -5.0 V V V V CONDITIONS MIN -80 V TYP. MAX UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
VCEsat-1 VCEsat-2 VBEsat VBE
Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage
mA
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
BD910 BD912
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD910 BD912
4
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD910 BD912
5
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