BU2527DX

Product Specification www.jmnic.com Silicon NPN Power Transistors BU2527DX DESCRIPTION ・With TO-3PML package ・High voltage ・High speed switching ・Built-in damper diode APPLICATIONS ・For use in horizontal deflection circuits of high resolution monitors PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Max.operating junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7.5 12 30 8 12 45 150 -65~150 UNIT V V V A A A A W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VEBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 VF PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage CONDITIONS IC=100mA ;IB=0,L=25mH IE=600mA ;IC=0 IC=8A ;IB=1.6A IC=8A ;IB=1.6A VCE=BVCES; VBE=0 TC=125℃ VEB=6V; IC=0 IC=1A ; VCE=5V IC=8A ; VCE=5V IF=8A 5 MIN 800 7.5 BU2527DX TYP. MAX UNIT V V 5.0 1.1 1.0 2.0 110 11 10 2.0 V V mA mA V JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE BU2527DX Fig.2 Outline dimensions JMnic