BU2722AF

Product Specification www.jmnic.com Silicon Power Transistors BU2722AF DESCRIPTION ・With TO-3PFa package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of high resolution monitors PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Max.operating junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1700 825 7.5 10 25 10 14 45 150 -65~150 UNIT V V V A A A A W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VEBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=100mA ;IB=0,L=25mH IE=1mA ;IC=0 IC=4.5A IB=1.0A IC=4.5A IB=1.0A VCB=BVCBO IE=0 TC=125℃ VEB=7.5V; IC=0 IC=0.1A ; VCE=5V IC=4.5A ; VCE=1V 4.5 22 MIN 825 7.5 BU2722AF TYP. MAX UNIT V V 1.0 1.0 1.0 2.0 1.0 V V mA mA 10 JMnic Product Specification www.jmnic.com Silicon Power Transistors PACKAGE OUTLINE BU2722AF Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) JMnic