Product Specification
www.jmnic.com
Silicon Power Transistors
BUL6825
DESCRIPTION ・High voltage ,high speed ・With TO-220C package APPLICATIONS ・Relay drivers ・Inverters ・Switching regulators ・Deflection circuits
PINNING PIN 1 2 3 Base Collector;connected to mounting base emitter DESCRIPTION
・
LIMITING VALUES
SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-PeaK Total power dissipation Total power dissipation Junction temperature Storage temperature Ta=25℃ TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 700 400 9 4 8 2 4 2 75 150 -65~150 UNIT V V V A A A A W W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 1.67 UNIT ℃/W
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Product Specification
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Silicon Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Emitter-base saturation voltage Emitter-base saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector outoput capacitance CONDITIONS IC=10mA IB=0 IC=1A IB=0.2A IC=2A IB=0.5A TC=100℃ IC=4A IB=1A IC=1A IB=0.2A IC=2A IB=0.5A TC=100℃ VCB=700V IE=0 TC=100℃ VEB=9V; IC=0 IC=1A ; VCE=5V IC=2A ; VCE=5V IC=0.5A ; VCE=5V f=1MHz ; VCB=10V 10 8 4 65 MIN 400 TYP.
BUL6825
MAX
UNIT V
0.5 0.6 1.0 1.0 1.2 1.6 1.5 1.0 5.0 1.0 60 40
V V V V V mA mA
MHz pF
Switching times resistive load td tr ts tf Delay time Rise time Storage time Fall time VCC=125V ,IC=2A IB1=- IB2=0.4A tp=25μs duty cycle≤1% 0.1 0.7 4.0 0.9 μs μs μs μs
JMnic
Product Specification
www.jmnic.com
Silicon Power Transistors
PACKAGE OUTLINE
BUL6825
Fig.2 Outline dimensions (unindicated tolerance: 0.1mm)
JMnic
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