250R18X475MV4E

TANCERAM CHIP CAPACITORS ® TANCERAM® chip capacitors can replace tantalum capacitors in many applications and offer several key advantages over traditional tantalums. Because TANCERAM® capacitors exhibit extremely low ESR, equivalent circuit performance can often be achieved using considerably lower capacitance values. Low DC leakage reduces current drain, extending the battery life of portable products. TANCERAM® high DC breakdown voltage ratings offer improved reliability and eliminate large voltage de-rating common when designing with tantalums. ADVANTAGES • Low ESR • Low DC Leakage • Higher Surge Voltage • Non-polarized Devices • Reduced CHIP Size • Improved Reliability • Higher Insulation Resistance • Higher Ripple Current APPLICATIONS • Switching Power Supply Smoothing (Input/Output) • Backlighting Inverters • DC/DC Converter Smoothing (Input/Output) • General Digital Circuits HOW TO ORDER TANCERAM® 16 Part number written: 100R15X106MV4E 100 R15 X 106 M V 4 E VOLTAGE SIZE DIELECTRIC CAPACITANCE TOLERANCE TERMINATION MARKING PACKING 6R3 = 6.3 V 100 = 10 V 160 = 16 V 250 = 25 V 500 = 50 V 101 = 100 V See Chart W = X7R X = X5R 1st two digits are significant; third digit denotes number of zeros. 105 = 1.00 µF 476 = 47.0 µF 107 = 100 µF K = ±10% M = ±20% V = Nickel Barrier with 100% Tin Plating (Matte) 4 = Unmarked Code Type Reel E Plastic 7” T Paper 7” Tape specifications conform to EIA RS481 T = SnPb* (*available on select parts) www.johanson dielectrics.com DIELECTRIC TANCERAM CHIP CAPACITORS ® INCHES (mm) 0201 R05 L W T EB .024 ±.001 .011 ±.001 .013 Max. .004 Min. (0.60 ±.03) (0.28 ±.03) (0.33 Max.) (0.10 Min.) 0402 R07 L W T EB .039 ±.002 .020 ±.002 .022 Max. .002 Min. (0.99 ±.05) (0.51 ±.05) (0.55 Max.) (0.05 Min.) VDC 1.0 µF Dielectric W 10 6.3 4 35 25 16 10 6.3 X L T E/B X (X5R) CAPACITANCE SELECTION EIA / JDI W W (X7R) 1.5 µF 2.2 µF 3.3 µF 4.7 µF 10 µF 22 µF 47 µF 100 µF 220 µF W W W W W W W X X X X X X X X X 4 50 35 25 16 10 6.3 50 35 25 16 10 6.3 4 50 35 25 16 10 6.3 50 35 25 16 10 6.3 0603 R14 L W T EB .063 ±.004 .031 ±.004 .037 Max. .006 Min. (1.60 ±.10) (0.79 ±.10) (0.93 Max.) (0.15 Min.) 0805 R15 L W T EB .079 ±.012 .049 ±.008 .057 Max. .008 Min. (2.01 ±.30) (1.24 ±.20) (1.44 Max.) (0.20 Min.) 1206 R18 L W T EB .126 ±.012 .063 ±.008 .071 Max. .010 Min. (3.20 ±.30) (1.60 ±.20) (1.80) (0.25 Min.) 1210 S41 L W T EB .126 ±.012 .098 ±.012 .106 Max. .012 Min. (3.20 ±.30) (2.49 ±.30) (2.69 Max.) (0.30 Min.) 1812 S43 L W T EB .177 ±.016 .126 ±.012 .118 Max. .012 Min. (4.50 ±.41) (3.20 ±.30) (2.99 Max.) (0.30 Min.) 50 2220 S47 L W T EB .220 ±.016 .197 ±.016 .118 Max. .012 Min. (5.59 ±.41) (3.20 ±.30) (2.99 Max.) (0.30 Min.) 50 25 25 “K” OR “M” TOLERANCE, 0201 ONLY AVALIABLE IN M ONLY “M” TOLERANCE ELECTRICAL CHARACTERISTICS DIELECTRIC: X7R TEMPERATURE COEFFICIENT: DISSIPATION FACTOR: INSULATION RESISTANCE (MIN. @ 25°C, WVDC) DIELECTRIC STRENGTH: TEST CONDITIONS: OTHER: X5R ±15% (-55 to +125°C) ±15% (-55 to +85°C) For ≥ 50 VDC: 5% max. For ≤ 35 VDC: 10% max. For ≥ 50 VDC: 5% max. For ≤ 35 VDC: 10% max. 100 ΩF or 10 GΩ, whichever is less 2.5 X WVDC, 25°C, 50mA max. Capacitance values ≤ 10 µF: 1.0kHz±50Hz @ 1.0±0.2 Vrms Capacitance values > 10 µF: 120Hz±10Hz @ 0.5V±0.1 Vrms See page 81 for additional dielectric specifications. www.johanson dielectrics.com 17