R
N 沟道增强型场效应晶体管 N-CHANNEL MOSFET
JCS830
主要参数
MAIN CHARACTERISTICS
封装 Package
ID VDSS Rdson @Vgs=10V) ( Qg 用途
高频开关电源 电子镇流器 UPS 电源
4.5 A 500 V 1.5 Ω 32 nC
APPLICATIONS
High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 17pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product
产品特性
低栅极电荷 低 Crss (典型值 17pF) 开关速度快 产品全部经过雪崩测试 高抗 dv/dt 能力 RoHS 产品
订货信息 ORDER MESSAGE
订货型号 Order codes JCS830V-O-V-N-B JCS830R-O-R-N-B JCS830S-O-S-N-B JCS830B-O-B-N-B JCS830C-O-C-N-B JCS830F-O-F-N-B 印 记 封 IPAK DPAK TO-263 TO-262 TO-220C TO-220MF 装 否 否 否 否 否 否 无卤素 Halogen Free NO NO NO NO NO NO 包 装 器件重量 Device Weight 0.35 g(typ) 0.30 g(typ) 1.37 g(typ) 1.71 g(typ) 2.15 g(typ) 2.20 g(typ) Marking JCS830V JCS830R JCS830S JCS830B JCS830C JCS830F Package Packaging 条管 Tube 条管 Tube 条管 Tube 条管 Tube 条管 Tube 条管 Tube
版本:201007A
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JCS830
ABSOLUTE RATINGS (Tc=25℃)
目 符 号 JCS830V/R 数 值 JCS830F Value JCS830S/B/C 500 4.5 2.9 4.5* 2.9* 单 位 Unit V A A 项
绝对最大额定值
Parameter 最高漏极-源极直流电压 Drain-Source Voltage 连续漏极电流 Drain Current
Symbol VDSS ID T=25℃ T=100℃ IDM
-continuous
最大脉冲漏极电流(注 1) Drain Current - pulse (note 1) 最高栅源电压 Gate-Source Voltage 单脉冲雪崩能量(注 2) Single Pulsed Avalanche Energy (note 2) 雪崩电流(注 1) Avalanche Current(note 1) 重复雪崩能量(注 1) Repetitive Avalanche Current (note 1) 二极管反向恢复最大电压变化速 率(注 3) Peak Diode Recovery dv/dt(note 3)
18
18*
A
VGSS
±30
V
EAS
270
mJ
IAR
4.5
A
EAR
7.3
mJ
dv/dt
5.5
V/ns
耗散功率 Power Dissipation
PD TC=25℃ -Derate above 25℃ TJ,TSTG
59
73
38
W
0.48
0.58
0.3
W/℃
最高结温及存储温度 Operating and Storage Temperature Range 引线最高焊接温度 Maximum Lead Temperature for Soldering Purposes
-55~+150
℃
TL
300
℃
*漏极电流由最高结温限制 *Drain current limited by maximum junction temperature
版本:201007A
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JCS830
项 目 符 号 测试条件 Tests conditions 最小 典型 最大 单 位 Min Typ Max Units Parameter Symbol
电特性 ELECTRICAL CHARACTERISTICS
关态特性 Off –Characteristics 漏-源击穿电压 Drain-Source Voltage 击穿电压温度特性 Breakdown Voltage Temperature Coefficient 零栅压下漏极漏电流 Zero Gate Voltage Drain Current 正向栅极体漏电流 Gate-body leakage current, forward 反向栅极体漏电流 Gate-body leakage current, reverse 通态特性 On-Characteristics 阈值电压 Gate Threshold Voltage 静态导通电阻 Static Drain-Source On-Resistance 正向跨导 Forward Transconductance 动态特性 Dynamic Characteristics 输入电容 Input capacitance 输出电容 Output capacitance 反向传输电容 Reverse transfer capacitance Ciss Coss Crss VDS=25V, VGS =0V, f=1.0MHZ 800 1050 76 17 100 22 pF pF pF VGS(th) VDS = VGS , ID=250μA 2.0 4.0 V BVDSS ID=250μA, VGS=0V 500 V
ΔBVDSS/Δ ID=250μA, referenced to 25℃ TJ VDS=500V,VGS=0V, TC=25℃ VDS=400V, IGSSF VDS=0V, TC=125℃
-
0.54
-
V/℃
IDSS
-
-
10 100 100
μA μA nA
VGS =30V
IGSSR
VDS=0V,
VGS =-30V
-
-
-100
nA
RDS(ON)
VGS =10V , ID=2.25A VDS = 40V, ID=2.25A(note 4)
-
1.16 1.5
Ω
gfs
-
4.2
-
S
版本:201007A
3/14
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JCS830
td(on) tr td(off) tf Qg Qgs Qgd VDS =400V , ID=4.5A VGS =10V (note 4,5) VDD=250V,ID=4.5A,RG=25Ω (note 4,5) 15 40 40 90 ns ns ns ns nC nC nC
电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics 延迟时间 Turn-On delay time 上升时间 Turn-On rise time 延迟时间 Turn-Off delay time 下降时间 Turn-Off Fall time 栅极电荷总量 Total Gate Charge 栅-源电荷 Gate-Source charge 栅-漏电荷 Gate-Drain charge
85 180 45 100 32 3.7 15 44 -
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings 正向最大连续电流 Maximum Continuous Drain -Source Diode Forward Current 正向最大脉冲电流 Maximum Pulsed Drain-Source Diode Forward Current 正向压降 Drain-Source Diode Forward Voltage 反向恢复时间 Reverse recovery time 反向恢复电荷 Reverse recovery charge VSD IS 4.5 A
ISM
-
-
18
A
VGS=0V,
IS=4.5A
-
-
1.4
V
trr Qrr
VGS=0V, IS=4.5A dIF/dt=100A/μs (note 4)
-
305 2.6
-
ns μC
热特性 THERMAL CHARACTERISTIC
项 目 符 号 最大 Max JCS830V/R JCS830S/B/C JCS830F 2.05 110 1.71 62.5 3.31 62.5 单 位 Parameter 结到管壳的热阻 Thermal Resistance, Junction to Case 结到环境的热阻 Thermal Resistance, Junction to Ambient
注释: 1:脉冲宽度由最高结温限制 2:L=24mH, IAS=4.5A, VDD=50V, RG=25 Ω,起始结 温 TJ=25℃ 3:ISD ≤4.5A,di/dt ≤300A/μs,VDD≤BVDSS,起始结温 TJ=25℃ 4:脉冲测试:脉冲宽度≤300μs,占空比≤2% 5:基本与工作温度无关
Symbol Rth(j-c) Rth(j-A)
Unit ℃/W ℃/W
Notes: 1:Pulse width limited by maximum junction temperature 2:L=24mH, IAS=4.5A, VDD=50V, RG=25 Ω,Starting TJ=25℃ 3:ISD ≤4.5A,di/dt ≤300A/μs,VDD≤BVDSS, Starting TJ=25℃ 4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2% 5:Essentially independent of operating temperature
版本:201007A
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JCS830
ELECTRICAL CHARACTERISTICS (curves) Transfer Characteristics
特征曲线
On-Region Characteristics
VGS 15V 10V 8V 7V 6.5V 6V 5.5V Bottom 5V Top
10
10
25℃ ID [A]
ID [A]
150℃
1
1
Notes: 1. 250μs pulse test 2. TC=25℃
0.1
Notes: 1.250μs pulse test 2.VDS=40V
2 4 6 8 10
1
10
VDS [V]
VGS [V]
On-Resistance Variation vs. Drain Current and Gate Voltage
2.0 1.9 1.8
Body Diode Forward Voltage Variation vs. Source Current and Temperature
10
RDS (on ) [ Ω ]
I DR [A]
1.7 1.6 1.5 1.4 1.3 1.2 1.1
VGS=10V
25℃
VGS=20V
1
150℃
Note : j=25℃ T
0.1 0.4 0.6 0.8 1.0
Notes: 1. 250μs pulse test 2. VGS=0V
1.2 1.4 1.6
0
2
4
6
8
ID [A]
V SD [V]
Capacitance Characteristics
12
Gate Charge Characteristics
VDS=400V
10
VGS Gate Source Voltage[V]
VDS=250V VDS=100V
8
6
4
2
0
0
4
8
12
16
20
24
28
32
36
Qg Toltal Gate Charge [nC]
版本:201007A
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JCS830
On-Resistance Variation vs. Temperature
3.0 2.5
特征曲线 ELECTRICAL CHARACTERISTICS (curves) Breakdown Voltage Variation vs. Temperature
1.2
BV DS (normalized)
1.1
R D (on ) (Normalizde)
2.0
1.0
1.5
1.0
0.9
Notes: 1. VGS=0V 2. ID=250μA
-50 0 50 100 150
0.5
Notes: 1. VGS=10V 2. ID=2.25A
-50 0 50 100 150
0.8
0.0
T j [℃ ]
T j [ ℃]
Maximum Safe Operating Area For JCS830V/R/S/B/C
Maximum Safe Operating Area For JCS830F
Maximum Drain Current vs. Case Temperature
版本:201007A
6/14
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JCS830
Transient Thermal Response Curve For JCS830V/R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transient Thermal Response Curve For JCS830S/B/C
Transient Thermal Response Curve For JCS830F
版本:201007A
7/14
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单位 Unit:mm
外形尺寸 PACKAGE MECHANICAL DATA IPAK
版本:201007A
8/14
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JCS830
单位 Unit:mm
外形尺寸 PACKAGE MECHANICAL DATA DPAK
版本:201007A
9/14
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JCS830
单位 Unit:mm
外形尺寸 PACKAGE MECHANICAL DATA TO-262
版本:201007A
10/14
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JCS830
单位 Unit:mm
外形尺寸 PACKAGE MECHANICAL DATA TO-263
版本:201007A
11/14
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JCS830
单位 Unit:mm
外形尺寸 PACKAGE MECHANICAL DATA TO-220C
版本:201007A
12/14
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JCS830
单位 Unit:mm
外形尺寸 PACKAGE MECHANICAL DATA TO-220MF
版本:201007A
13/14
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JCS830
NOTE
1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don’t be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice.
注意事项
1.吉林华微电子股份有限公司的产品销售分 为直销和销售代理,无论哪种方式,订货 时请与公司核实。 2.购买时请认清公司商标,如有疑问请与公 司本部联系。
3.在电路设计时请不要超过器件的绝对最大 额定值,否则会影响整机的可靠性。 4.本说明书如有版本变更不另外告知
联系方式
吉林华微电子股份有限公司 公司地址:吉林省吉林市深圳街 99 号 邮编:132013 总机:86-432-64678411 传真:86-432-64665812 网址:www.hwdz.com.cn 市场营销部 地址:吉林省吉林市深圳街 99 号 邮编:132013 电话: 86-432-64675588 64675688 64678411-3098/3099 传真: 86-432-64671533
CONTACT
JILIN SINO-MICROELECTRONICS CO., LTD. ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64678411 Fax:86-432-64665812 Web Site:www.hwdz.com.cn MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411-3098/3099 Fax: 86-432-64671533
版本:201007A
14/14