R
N 沟道增强型场效应晶体管 N-CHANNEL MOSFET
JCS9N90ANT
主要参数
MAIN CHARACTERISTICS
封装 Package
ID VDSS Rdson @Vgs=10V) ( Qg 用途
高频开关电源 电子镇流器 UPS 电源
9A 900 V 1.35 Ω 43 nC
APPLICATIONS
High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 13pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product
TO-3PN
产品特性
低栅极电荷 低 Crss (典型值 13pF) 开关速度快 产品全部经过雪崩测试 高抗 dv/dt 能力 RoHS 产品
订货信息 ORDER MESSAGE
订货型号 Order codes JCS9N90ANT-O-AN-N-B 印 记 封 装 无卤素 Halogen Free 否 NO Marking JCS9N90ANT Package TO-3PN 包 装 Packaging 条管 Tube 器件重量 Device Weight 5.73g(typ)
版本:201010A
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JCS9N90ANT
ABSOLUTE RATINGS (Tc=25℃)
目 符 号 数 值 单 位 Unit V A A A V mJ A mJ V/ns Value JCS9N90ANT 900 9 6.0* 36 ±30 858 9 27.7 4.1 项
绝对最大额定值
Parameter 最高漏极-源极直流电压 Drain-Source Voltage 连续漏极电流 Drain Current
Symbol VDSS ID T=25℃ T=100℃ IDM VGSS
-continuous
最大脉冲漏极电流(注 1) Drain Current - pulse (note 1) 最高栅源电压 Gate-Source Voltage
单脉冲雪崩能量(注 2) EAS Single Pulsed Avalanche Energy note 2) ( 雪崩电流(注 1) Avalanche Current(note 1) 重复雪崩能量(注 1) Repetitive Avalanche Current(note 1) IAR EAR
二极管反向恢复最大电压变化速率(注 3) dv/dt Peak Diode Recovery dv/dt(note 3) PD TC=25℃ -Derate above 25℃ TJ,TSTG
277
W
耗散功率 Power Dissipation
2.22
W/℃
最高结温及存储温度 Operating and Storage Temperature Range 引线最高焊接温度 Maximum Lead Temperature for Soldering Purposes
-55~+150
℃
TL
300
℃
*漏极电流由最高结温限制 *Drain current limited by maximum junction temperature
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项 目 符 号 测试条件 Tests conditions 最小 典型 最大 单位 Min Typ Max Units Parameter Symbol
电特性 ELECTRICAL CHARACTERISTICS
关态特性 Off –Characteristics 漏-源击穿电压 Drain-Source Voltage 击穿电压温度特性 Breakdown Voltage Temperature Coefficient 零栅压下漏极漏电流 Zero Gate Voltage Drain Current 正向栅极体漏电流 Gate-body leakage current, forward 反向栅极体漏电流 Gate-body leakage current, reverse 通态特性 On-Characteristics 阈值电压 Gate Threshold Voltage 静态导通电阻 Static Drain-Source On-Resistance 正向跨导 Forward Transconductance 动态特性 Dynamic Characteristics 输入电容 Input capacitance 输出电容 Output capacitance 反向传输电容 Reverse transfer capacitance Ciss Coss Crss VDS=25V, VGS =0V, f=1.0MHZ 2150 2830 189 13 246 17 pF pF pF VGS(th) VDS = VGS , ID=250μA 3.0 4.5 V BVDSS ID=250μA, VGS=0V 900 V
ΔBVDSS/Δ ID=250μA, referenced to 25℃ TJ VDS=900V,VGS=0V, TC=25℃ VDS=720V, IGSSF VDS=0V, TC=125℃
-
0.98
-
V/℃
IDSS
-
-
1 10 100
μA μA nA
VGS =30V
IGSSR
VDS=0V,
VGS =-30V
-
-
-100
nA
RDS(ON)
VGS =10V , ID=4.5A
-
1.18 1.35
Ω
gfs
VDS = 40V, ID=4.5A note 4) (
9.5
-
S
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td(on) tr td(off) tf Qg Qgs Qgd VDS =720V , ID=9A VGS =10V (note 4,5) VDD=450V,ID=9A,RG=25Ω (note 4,5) 53 121 116 235 97 199 69 171 43 15 21 56 ns ns ns ns nC nC nC
电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics 延迟时间 Turn-On delay time 上升时间 Turn-On rise time 延迟时间 Turn-Off delay time 下降时间 Turn-Off Fall time 栅极电荷总量 Total Gate Charge 栅-源电荷 Gate-Source charge 栅-漏电荷 Gate-Drain charge
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings 正向最大连续电流 Maximum Continuous Drain -Source Diode Forward Current 正向最大脉冲电流 Maximum Pulsed Drain-Source Diode Forward Current 正向压降 Drain-Source Diode Forward Voltage 反向恢复时间 Reverse recovery time 反向恢复电荷 Reverse recovery charge VSD IS 9 A
ISM
-
-
36
A
VGS=0V,
IS=9A
-
-
1.4
V
trr Qrr
VGS=0V, IS=9A (note 4) dIF/dt=100A/μs
-
539 6.41
-
ns μC
热特性 THERMAL CHARACTERISTIC
项 目 符 号 最大 Max JCS9N90ANT 0.45 40
Notes: 注释: 1:脉冲宽度由最高结温限制 2:L=20mH, IAS=9A, VDD=50V, RG=25 Ω,起始结温 TJ=25℃ 3:ISD ≤9A,di/dt ≤200A/μs,VDD≤BVDSS,起始结温 TJ=25℃ 4:脉冲测试:脉冲宽度≤300μs,占空比≤2% 5:基本与工作温度无关 1:Pulse width limited by maximum junction temperature 2:L=20mH, IAS=9A, VDD=50V, RG=25 Ω,Starting TJ=25℃ 3:ISD ≤9A,di/dt ≤200A/μs,VDD≤BVDSS, Starting TJ=25℃ 4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2% 5:Essentially independent of operating temperature
单
位
Parameter 结到管壳的热阻 Thermal Resistance, Junction to Case 结到环境的热阻 Thermal Resistance, Junction to Ambient
Symbol Rth(j-c) Rth(j-A)
Unit ℃/W ℃/W
版本:201010A
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ELECTRICAL CHARACTERISTICS (curves) Transfer Characteristics
特征曲线
On-Region Characteristics
VGS 15V 10V 9V 8V 7V 6.5V 6V 5.5V Bottom 5V Top
10
I D [A]
I D [A]
10
150℃
1
25℃
1
Notes: 1. 250μs pulse test 2. TC=25℃
0.1
Notes: 1.250μs pulse test 2.VDS=40V
2 4 6 8 10
1
10
V DS [V]
V G S [V]
On-Resistance Variation vs. Drain Current and Gate Voltage
Body Diode Forward Voltage Variation vs. Source Current and Temperature
1.6
10
R DS ( on ) [ Ω ]
1.4
VGS=10V
I D R [A]
150℃
1
25℃
1.2
VGS=20V
Note:Tj=25℃
Notes: 1. 250μs pulse test 2. VGS=0V
14
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
1.0
0
2
4
6
8
10
12
I D [A]
V S D [V]
Capacitance Characteristics
12
Gate Charge Characteristics
3x10
3
Capacitance [pF]
VGS Gate Source Voltage[V]
Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd Ciss Coss
VDS=720V
10
VDS=450V VDS=180V
8
2x10
3
6
1x10
3
4
Crss
0 10
-1
2
0
V D S Drain-Source Voltage [V]
10
0
10
1
0
10
20
30
40
Qg Toltal Gate Charge [nC]
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On-Resistance Variation vs. Temperature
4.0 3.5
特征曲线 ELECTRICAL CHARACTERISTICS (curves) Breakdown Voltage Variation vs. Temperature
1.2
BV DS (Normalized)
1.1
3.0
R D ( on ) (Normalized)
2.5 2.0 1.5 1.0 0.5 0.0 -75
1.0
0.9
Notes: 1. V G S = 0V 2. I D = 250μA
-50 -25 0 25 50 75 100 125 150
Notes: 1. VGS=10V 2. ID=4.5A
-50 -25 0 25 50 75 100 125 150
0.8 -75
T j [℃ ]
T j [℃ ]
Maximum Safe Operating Area
10
Maximum Drain Current vs. Case Temperature
10
2
Operation in This Area is Limited by RDS(ON)
10μs
8
ID Drain Current [A]
ID Drain Current [A]
10
1
100μs 1ms 10ms
6
4
10
0
10
-1
Note: 1 TC=25℃ 2 TJ=150℃ 3 Single Pulse
0
100ms DC
2
10
VDS Drain-Source Voltage [V]
10
1
10
2
10
3
0 25
50
75
100
125
150
TC Case Temperature [℃]
Transient Thermal Response Curve
1
(t) Thermal Response
D = 0 .5 0 .2
0 .1
0 .1 0 .0 5 0 .0 2 0 .0 1
N 1 2 3
o te s : Z θ J C (t)= 0 .4 5 ℃ /W M a x D u ty F a c to r , D = t1 /t2 T J M -T c = P D M * Z θ J C(t)
θ JC
Z
P
0 .0 1
DM
s in g le p u ls e
t1 t2
1 E -5
1 E -4
1 E -3
0 .0 1
0 .1
1
10
t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ]
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单位 Unit :mm
外形尺寸 PACKAGE MECHANICAL DATA TO-3PN
版本:201010A
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JCS9N90ANT
NOTE
1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don’t be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice.
注意事项
1.吉林华微电子股份有限公司的产品销售分 为直销和销售代理,无论哪种方式,订货 时请与公司核实。 2.购买时请认清公司商标,如有疑问请与公 司本部联系。
3.在电路设计时请不要超过器件的绝对最大 额定值,否则会影响整机的可靠性。 4.本说明书如有版本变更不另外告知
联系方式
吉林华微电子股份有限公司 公司地址:吉林省吉林市深圳街 99 号 邮编:132013 总机:86-432-64678411 传真:86-432-64665812 网址:www.hwdz.com.cn 市场营销部 地址:吉林省吉林市深圳街 99 号 邮编:132013 电话: 86-432-64675588 64675688 64678411-3098/3099 传真: 86-432-64671533
CONTACT
JILIN SINO-MICROELECTRONICS CO., LTD. ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64678411 Fax:86-432-64665812 Web Site:www.hwdz.com.cn MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411-3098/3099 Fax: 86-432-64671533
版本:201010A
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