2N3904S-RTK/PS

SEMICONDUCTOR 2N3904S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B L L FEATURES D ・Low Leakage Current 2 H A 3 G : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. 1 ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage Q P K : Cob=4pF(Max.) @VCB=5V. J C ・Low Collector Output Capacitance P N : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M ・Complementary to 2N3906S. 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 200 mA Base Current IB 50 mA PC * 350 mW Tj 150 ℃ Tstg -55～150 ℃ SOT-23 Collector Power Dissipation Junction Temperature Storage Temperature Range Marking Lot No. Type Name ZC * PC : Package Mounted On 99.5% Alumina 10×8×0.6㎜) 2003. 2. 25 Revision No : 3 1/4 2N3904S ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICEX VCE=30V, VEB=3V - - 50 nA Base Cut-off Current IBL VCE=30V, VEB=3V - - 50 nA Collector-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0 60 - - V Collector-Emitter Breakdown Voltage * V(BR)CEO IC=1mA, IB=0 40 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0 6.0 - - V hFE(1) VCE=1V, IC=0.1mA 40 - - hFE(2) VCE=1V, IC=1mA 70 - - hFE(3) VCE=1V, IC=10mA 100 - 300 hFE(4) VCE=1V, IC=50mA 60 - - hFE(5) VCE=1V, IC=100mA 30 - - VCE(sat)1 IC=10mA, IB=1mA - - 0.2 VCE(sat)2 IC=50mA, IB=5mA - - 0.3 VBE(sat)1 IC=10mA, IB=1mA 0.65 - 0.85 VBE(sat)2 IC=50mA, IB=5mA - - 0.95 300 - - MHz DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage V * V fT Transition Frequency VCE=20V, IC=10mA, f=100MHz Collector Output Capacitance Cob VCB=5V, IE=0, f=1MHz - - 4.0 pF Input Capacitance Cib VBE=0.5V, IC=0, f=1MHz - - 8.0 pF Input Impedance hie 1.0 - 10 kΩ Voltage Feedback Ratio hre 0.5 - 8.0 x10-4 VCE=10V, IC=1mA, f=1kHz Small-Signal Current Gain hfe 100 - 400 Collector Output Admittance hoe 1.0 - 40 Ω μ Noise Figure NF - - 5.0 dB VCE=5V, IC=0.1mA Rg=1kΩ, f=10Hz～15.7kHz Delay Time td - - 35 Rise Time tr - - 35 Switching Time nS Storage Time tstg - - 200 Fall Time tf - - 50 * Pulse Test : Pulse Width≦300μS, Duty Cycle≦2%. 2003. 2. 25 Revision No : 3 2/4 2N3904S 2003. 2. 25 Revision No : 3 3/4 2N3904S 2003. 2. 25 Revision No : 3 4/4