2N3906S-RTK/H

SEMICONDUCTOR 2N3906S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B FEATURES L 2 H A 3 G ・Low Leakage Current D L : ICEX=-50nA(Max.), IBL=-50nA(Max.) 1 @VCE=-30V, VEB=-3V. ・Excellent DC Current Gain Linearity. P K ・Low Collector Output Capacitance MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 J C : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. P N ・Low Saturation Voltage DIM A B C D E G H J K L M N P M : Cob=4.5pF(Max.) @VCB=-5V. 1. EMITTER 2. BASE ・Complementary to 2N3904S. 3. COLLECTOR ・Suffix U : Qualified to AEC-Q101. ex) 2N3906S-RTK/HU SOT-23 Marking ℃) MAXIMUM RATING (Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -200 mA Base Current IB -50 mA PC * 350 mW Tj 150 ℃ Tstg -55～150 ℃ Collector Power Dissipation Junction Temperature Storage Temperature Range Type Name Lot No. ZA Note : * Package Mounted On 99.5% Alumina 10×8×0.6㎜) 2020. 10. 05 Revision No : 5 1/4 2N3906S ℃) ELECTRICAL CHARACTERISTICS (Ta=25℃ CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICEX VCE=-30V, VEB=-3V - - -50 nA Base Cut-off Current IBL VCE=-30V, VEB=-3V - - -50 nA Collector-Base Breakdown Voltage V(BR)CBO IC=-10μA, IE=0 -40 - - V Collector-Emitter Breakdown Voltage * V(BR)CEO IC=-1mA, IB=0 -40 - - V Emitter-Base Breakdown Voltage * V(BR)EBO IE=-10μA, IC=0 -5.0 - - V hFE(1) VCE=-1V, IC=-0.1mA 60 - - hFE(2) VCE=-1V, IC=-1mA 80 - - hFE(3) VCE=-1V, IC=-10mA 100 - 300 hFE(4) VCE=-1V, IC=-50mA 60 - - hFE(5) VCE=-1V, IC=-100mA 30 - - VCE(sat)1 IC=-10mA, IB=-1mA - - -0.25 VCE(sat)2 IC=-50mA, IB=-5mA - - -0.4 VBE(sat)1 IC=-10mA, IB=-1mA -0.65 - -0.85 VBE(sat)2 IC=-50mA, IB=-5mA - - -0.95 250 - - MHz DC Current Gain * Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage * * fT Transition Frequency V V VCE=-20V, IC=-10mA, f=100MHz Collector Output Capacitance Cob VCB=-5V, IE=0, f=1MHz - - 4.5 pF Input Capacitance Cib VBE=-0.5V, IC=0, f=1MHz - - 10 pF Input Impedance hie 2.0 - 12 kΩ Voltage Feedback Ratio hre 1.0 - 10 x10-4 Small-Signal Current Gain hfe 100 - 400 Collector Output Admittance hoe 3.0 - 60 Ω μ Noise Figure NF - - 4.0 dB - - 35 - - 35 VCE=-10V, IC=-1mA, f=1kHz VCE=-5V, IC=-0.1mA, Rg=1kΩ, f=10Hz～15.7kHz Delay Time Rise Time tr 10kΩ V in 275Ω Vout td C Total 4pF VCC =-3.0V 0 t r ,t f < 1ns, Du=2% 0.5V -10.6V 300ns Switching Time nS Storage Time tstg 10kΩ V in 1N916 or equiv. Fall Time tf 275Ω Vout C Total 4pF - - 225 - - 75 VCC =-3.0V 9.1V 0 t r ,t f < 1ns, Du=2% -10.9V 20μs * Pulse Test : Pulse Width≦300μS, Duty Cycle≦2%. 2020. 10. 05 Revision No : 5 2/4 2N3906S I C - V CE -0.9 COLLECTOR CURRENT I C (mA) -1 1k -0.8 DC CURRENT GAIN h FE -100 h FE - I C -0.7 -80 -0.6 -0.5 -60 -0.4 -0.3 -40 COMMON EMITTER V CE =-1V 500 300 Ta=125 C Ta=25 C 100 Ta=-55 C 50 30 -0.2 10 -0.1 I B =-0.1mA -20 COMMON EMITTER Ta=25 C 0 0 -1 -2 -3 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) -4 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE(sat) - I C -1 -0.5 COMMON EMITTER I C /I B =10 -0.3 -0.1 25 C Ta=1 -0.05 Ta=25 C -0.03 -0.01 -0.1 Ta=-55 C -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) I C - V BE -200 VCE =-1V -160 VBE(sat) - I C BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) -10 -120 5 C Ta=25 C Ta=-55 C -80 Ta=12 COLLECTOR CURRENT I C (mA) COMMON EMITTER -40 0 0 -0.4 -0.8 -1.2 BASE-EMITTER VOLTAGE VBE (V) 2020. 10. 05 Revision No : 5 -1.6 COMMON EMITTER I C /I E =10 -5 -3 Ta=-55 C -1 -0.5 Ta=25 C Ta=125 C -0.3 -0.1 -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) 3/4 VCE - I B C ob - VCB , C -1.0 50 -0.4 -0.2 COMMON EMITTER Ta=25 C 0 -0.001 -0.01 -0.1 -1 BASE CURRENT I B (mA) 2020. 10. 05 CAPACITANCE C ob (pF) Cib (pF) I C =100mA I C =10mA -0.6 I C =30mA -0.8 Revision No : 5 -10 ib - V EB f=1MHz Ta=25 C 30 I C =1mA COLLECTOR-EMITTER VOLTAGE VCE (V) 2N3906S 10 C ob C ib 5 3 1 0.5 -0.1 -0.3 -1 -3 -10 -30 REVERSE VOLTAGE V CB (V) V EB (V) 4/4