2N3906S_05

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. L 2N3906S EPITAXIAL PLANAR PNP TRANSISTOR E B L FEATURES Low Leakage Current A @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. G : ICEX=-50nA(Max.), IBL=-50nA(Max.) 2 3 1 P P C Complementary to 2N3904S. 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB PC * Tj Tstg RATING -40 -40 -5 -200 -50 350 150 -55 150 0.6 ) UNIT V V V mA mA mW Type Name K : Cob=4.5pF(Max.) @VCB=-5V. M SOT-23 Marking J Low Collector Output Capacitance DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 N H D Lot No. ZA Note : * Package Mounted On 99.5% Alumina 10 8 2005. 4. 21 Revision No : 3 1/4 2N3906S ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Base Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage * * SYMBOL ICEX IBL V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) hFE(2) DC Current Gain * hFE(3) hFE(4) hFE(5) Collector-Emitter Saturation Voltage * VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob Cib hie hre hfe hoe NF VCE=-5V, IC=-0.1mA, Rg=1k Delay Time td , f=10Hz 15.7kHz Vout V in 275Ω 10kΩ C Total 4pF TEST CONDITION VCE=-30V, VEB=-3V VCE=-30V, VEB=-3V IC=-10 A, IE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 VCE=-1V, IC=-0.1mA VCE=-1V, IC=-1mA VCE=-1V, IC=-10mA VCE=-1V, IC=-50mA VCE=-1V, IC=-100mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-20V, IC=-10mA, f=100MHz VCB=-5V, IE=0, f=1MHz VBE=-0.5V, IC=0, f=1MHz MIN. -40 -40 -5.0 60 80 100 60 30 -0.65 250 2.0 TYP. - MAX. -50 -50 300 -0.25 UNIT nA nA V V V V -0.4 -0.85 V -0.95 4.5 10 12 10 400 60 4.0 dB MHz pF pF k x10-4 Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Collector Output Admittance Noise Figure * VCE=-10V, IC=-1mA, f=1kHz 1.0 100 3.0 - - - 35 Rise Time Switching Time Storage Time tr 0.5V -10.6V 300ns VCC =-3.0V 0 t r ,t f < 1ns, Du=2% - - 35 nS Vout V in 275Ω tstg 10kΩ 1N916 or equiv. C Total 4pF - - 225 Fall Time tf 9.1V -10.9V 20µs VCC =-3.0V 0 t r ,t f < 1ns, Du=2% - - 75 * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 2005. 4. 21 Revision No : 3 2/4 2N3906S I C - V CE -100 -1 -0.9 h FE - I C 1k -0.7 -0.6 -0.5 DC CURRENT GAIN h FE -0.8 500 300 Ta=125 C Ta=25 C Ta=-55 C COMMON EMITTER V CE =-1V COLLECTOR CURRENT I C (mA) -80 -60 100 50 30 -0.4 -40 -0.3 -0.2 -20 I B =-0.1mA COMMON EMITTER Ta=25 C 10 -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) -4 0 0 -1 -2 -3 COLLECTOR-EMITTER VOLTAGE VCE (V) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -1 -0.5 -0.3 COMMON EMITTER I C /I B =10 -0.1 -0.05 -0.03 Ta=1 25 C Ta=25 C Ta=-55 C -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) I C - V BE -200 COMMON EMITTER VCE =-1V COLLECTOR CURRENT I C (mA) -160 VBE(sat) - I C -10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COMMON EMITTER I C /I E =10 -120 -5 -3 5C Ta=25 C Ta=-55 C -80 Ta=12 -1 -0.5 -0.3 Ta=-55 C Ta=25 C Ta=125 C -40 0 0 -0.4 -0.8 -1.2 -1.6 BASE-EMITTER VOLTAGE VBE (V) -0.1 -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) 2005. 4. 21 Revision No : 3 3/4 2N3906S COLLECTOR-EMITTER VOLTAGE VCE (V) VCE - I B -1.0 -0.8 I C =1mA I C =10mA I C =30mA I C =100mA C ob - VCB , C 50 30 CAPACITANCE C ob (pF) Cib (pF) ib - V EB f=1MHz Ta=25 C -0.6 -0.4 -0.2 10 5 3 C ib C ob 0 -0.001 COMMON EMITTER Ta=25 C 1 0.5 -0.1 -0.3 -1 -3 -10 -30 -0.01 -0.1 -1 -10 BASE CURRENT I B (mA) REVERSE VOLTAGE V CB (V) V EB (V) 2005. 4. 21 Revision No : 3 4/4