2N3906_02

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B 2N3906 EPITAXIAL PLANAR PNP TRANSISTOR C Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. Low Collector Output Capacitance : Cob=4.5pF(Max.) @VCB=5V. Complementary to 2N3904. L M 1 2 3 F H A FEATURES N K D G E F C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -40 -40 -5 -200 -50 625 1.5 150 -55 150 UNIT V V V mA mA mW W TO-92 2002. 9. 12 Revision No : 2 1/4 2N3906 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Base Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage SYMBOL ICEX IBL V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) hFE(2) DC Current Gain * hFE(3) hFE(4) hFE(5) Collector-Emitter Saturation Voltage * VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob Cib hie hre hfe hoe NF VCE=-5V, IC=-0.1mA, Rg=1k , f=10Hz 15.7kHz Vout V in 275Ω TEST CONDITION VCE=-30V, VEB=-3V VCE=-30V, VEB=-3V IC=-10 A, IE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 VCE=-1V, IC=-0.1mA VCE=-1V, IC=-1mA VCE=-1V, IC=-10mA VCE=-1V, IC=-50mA VCE=-1V, IC=-100mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-20V, IC=-10mA, f=100MHz VCB=-5V, IE=0, f=1MHz VBE=-0.5V, IC=0, f=1MHz MIN. -40 -40 -5.0 60 80 100 60 30 -0.65 250 2.0 TYP. - MAX. -50 -50 300 -0.25 UNIT nA nA V V V V -0.4 -0.85 V -0.95 4.5 10 12 10 400 60 4.0 dB MHz pF pF k x10-4 Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Collector Output Admittance Noise Figure * VCE=-10V, IC=-1mA, f=1kHz 1.0 100 3.0 - Delay Time td 10kΩ C Total 4pF - - 35 Rise Time Switching Time tr 0.5V -10.6V 300ns VCC =-3.0V 0 t r ,t f < 1ns, Du=2% - - 35 nS Vout V in 275Ω Storage Time tstg 10kΩ 1N916 or equiv. C Total 4pF - 225 Fall Time tf 9.1V -10.9V 20µs VCC =-3.0V 0 t r ,t f < 1ns, Du=2% - - 75 * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 2002. 9. 12 Revision No : 2 2/4 2N3906 I C - VCE COLLECTOR CURRENT I C (mA) -100 -80 -60 -40 -20 0 -1 -0.9 -0.8 h FE - I C 1k DC CURRENT GAIN h FE 500 300 Ta=125 C Ta=25 C Ta=-55 C COMMON EMITTER VCE =-1V -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 IB =-0.1mA COMMON EMITTER Ta=25 C 100 50 30 0 -1 -2 -3 -4 10 -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) VBE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) -5 -3 COMMON EMITTER I C /I E =10 VCE(sat) - I C -1 -0.5 -0.3 COMMON EMITTER I C /I B =10 -1 -0.5 -0.3 Ta=-55 C Ta=25 C Ta=125 C -0.1 -0.05 -0.03 Ta=1 25 C Ta=25 C Ta=-55 C -0.1 -0.1 -0.3 -1 -3 -10 -30 -100 -300 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) I C - VBE COLLECTOR CURRENT I C (mA) -200 -160 -120 5C Ta=25 C Ta=55 C VCE - I B -1.0 -0.8 IC =1mA COMMON EMITTER VCE =-1V IC =10mA I C =30mA -0.6 -0.4 -0.2 -40 0 Ta=12 -80 0 -0.4 -0.8 -1.2 -1.6 0 -0.001 COMMON EMITTER Ta=25 C -0.01 -0.1 -1 I C =100mA -10 BASE-EMITTER VOLTAGE V BE (V) BASE CURRENT I B (mA) 2002. 9. 12 Revision No : 2 3/4 2N3906 50 30 CAPACITANCE C ob (pF) C ib (pF) COLLECTOR POWER DISSIPATION PC (mW) C ob - VCB , C ib - VEB f=1MHz Ta=25 C Pc - Ta 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 10 5 3 C ib C ob 1 0.5 -0.1 -0.3 -1 -3 -10 -30 REVERSE VOLTAGE V CB (V) V EB (V) AMBIENT TEMPERATURE Ta ( C) 2002. 9. 12 Revision No : 2 4/4