2N5401-AT/P

SEMICONDUCTOR 2N5401 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES ・High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V N E K ・Low Leakage Current. G : ICBO=-50nA(Max.) @VCB=-120V J D ・Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA ・Low Noise : NF=8dB (Max.) H CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Base Current IB -100 mA PC 625 mW PC 1.5 W Tj 150 ℃ Tstg -55～150 ℃ Collector Power Dissipation (Ta=25℃) Collector Power Dissipation (Tc=25℃) Junction Temperature Storage Temperature Range 1997. 5. 13 Revision No : 0 2 3 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M L MAXIMUM RATING (Ta=25℃) 1 C F F DIM A B C D E F G H J K L M N 1. EMITTER 2. BASE 3. COLLECTOR TO-92 1/2 2N5401 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL IEBO Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage Collector-Emitter * * Saturation Voltage Base-Emitter MIN. TYP. MAX. UNIT VCB=-120V, IE=0 - - -50 nA VCB=-120V, IE=0, Ta=100℃ - - -50 μA VEB=-3V, IC=0 - - -50 nA ICBO Collector Cut-off Current DC Current Gain TEST CONDITION * Saturation Voltage V(BR)CBO IC=-0.1mA, IE=0 -160 - - V V(BR)CEO IC=-1mA, IB=0 -150 - - V V(BR)EBO IE=-10μA, IC=0 -5 - - V hFE(1) VCE=-5V, IC=-1mA 50 - - hFE(2) VCE=-5V, IC=-10mA 60 - 240 hFE(3) VCE=-5V, IC=-50mA 50 - - VCE(sat)1 IC=-10mA, IB=-1mA - - -0.2 VCE(sat)2 IC=-50mA, IB=-5mA - - -0.5 VBE(sat)1 IC=-10mA, IB=-1mA - - -1.0 VBE(sat)2 IC=-50mA, IB=-5mA - - -1.0 100 - 300 MHz - - 6 pF V V fT Transition Frequency VCE=-10V, IC=-10mA, f=100MHz Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz Small-Signal Current Gain hfe VCE=-10V, IC=-1mA, f=1kHz 40 - 200 Noise Figure NF VCE=-5V, IC=-250μA Rg=1kΩ, f=10Hz～15.7kHz - - 8 dB * Pulse Test : Pulse Width≦300μS, Duty Cycle≦2%. 1997. 5. 13 Revision No : 0 2/2