2N5401S_99

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. L 2N5401S EPITAXIAL PLANAR PNP TRANSISTOR E B L FEATURES High Collector Breakdwon Voltage A Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120V Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA C G : VCBO=-160V, VCEO=-150V 2 3 1 P P N Low Noise : NF=8dB (Max.) DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 H M 1. EMITTER MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB PC * Tj Tstg RATING -160 -150 -5 -600 -100 350 150 -55 150 0.6 ) UNIT V V V mA mA mW 2. BASE 3. COLLECTOR K SOT-23 Marking Lot No. Note : * Package Mounted On 99.5% Alumina 10 8 Type Name ZE 1999. 12. 22 Revision No : 2 J D 1/2 2N5401S ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage * SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) DC Current Gain * hFE(2) hFE(3) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Small-Signal Current Gain Noise Figure * * VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob hfe NF TEST CONDITION VCB=-120V, IE=0 VCB=-120V, IE=0, Ta=100 VEB=-3V, IC=0 IC=-0.1mA, IE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-10V, IC=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz VCE=-10V, IC=-1mA, f=1kHz VCE=-5V, IC=-250 A Rg=1k * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. , f=10Hz 15.7kHz MIN. -160 -150 -5 50 60 50 100 40 TYP. MAX. -50 -50 -50 240 -0.2 V -0.5 -1.0 V -1.0 300 6 200 8 dB MHz pF UNIT nA A nA V V V 1999. 12. 22 Revision No : 2 2/2