2N5551S-RTK/P

SEMICONDUCTOR 2N5551S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES D ・High Collector Breakdwon Voltage 2 A 3 G : VCBO=180V, VCEO=160V H ・Low Leakage Current. 1 : ICBO=50nA(Max.) VCB=120V ・Low Saturation Voltage Q P J K C ・Low Noise : NF=8dB (Max.) P N : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 1. EMITTER MAXIMUM RATING (Ta=25℃) 2. BASE 3. COLLECTOR CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Base Current IB 100 mA PC * 350 mW Tj 150 ℃ Tstg -55～150 ℃ Collector Power Dissipation Junction Temperature Storage Temperature Range Note : * Package Mounted On 99.5% Alumina 10×8×0.6㎜) 2016. 03. 28 Revision No : 3 SOT-23 Marking Lot No. Type Name ZF 1/3 2N5551S ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL ICBO Collector Cut-off Current IEBO Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter * Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter * * Saturation Voltage Base-Emitter Saturation Voltage * TEST CONDITION MIN. TYP. MAX. UNIT VCB=120V, IE=0 - - 50 nA VCB=120V, IE=0, Ta=100℃ - - 50 ㎂ VEB=4V, IC=0 - - 50 nA V(BR)CBO IC=0.1mA, IE=0 180 - - V V(BR)CEO IC=1mA, IB=0 160 - - V V(BR)EBO IE=10㎂, IC=0 6 - - V hFE(1) VCE=5V, IC=1mA 80 - - hFE(2) VCE=5V, IC=10mA 80 - 250 hFE(3) VCE=5V, IC=50mA 30 - - VCE(sat)1 IC=10mA, IB=1mA - - 0.15 VCE(sat)2 IC=50mA, IB=5mA - - 0.2 VBE(sat)1 IC=10mA, IB=1mA - - 1.0 VBE(sat)2 IC=50mA, IB=5mA - - 1.0 100 - 300 MHz - V V fT Transition Frequency VCE=10V, IC=10mA, f=100MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - - 6 pF Input Capacitance Cib VBE=0.5V, IC=0, f=1MHz - - 20 pF Small-Signal Current Gain hfe VCE=10V, IC=1mA, f=1kHz 50 - 200 - Noise Figure NF - - 8 dB VCE=5V, IC=250㎂ Rg=1kΩ, f=10Hz～15.7kHz * Pulse Test : Pulse Width≦300㎲, Duty Cycle≦2%. 2016. 03. 28 Revision No : 3 2/3 2N5551S h FE - I C 1K 140 Ta=125 C Ta=25 C 120 I B =10mA 100 I B =6mA 80 I B =4mA 60 I B =2mA DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C - V CE 40 I B =0.5mA 20 0 1 2 3 5 4 100 10 0.1 I C /I B=10 Ta=-25 C 1 Ta=25 C 1 10 1K 100 COLLECTOR-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE V BE(sat) (V) 10 0.1 10 100 1000 VCE(sat) - I C VBE(sat) - I C 0.1 0.01 1 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) Ta=125 C Ta=25 C Ta=-25 C 1 0.01 0 VCE = 5V 1 I C /I B=10 0.5 0.3 Ta=125 C 0.1 0.05 Ta=25 C 0.03 0.01 0.01 0.1 1 Ta=-25 C 10 100 1K COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) SAFE OPERATING AREA I C MAX.(PULSED) * 1 CONTINUOUS DC 0.1 *1 m S *1 0m S OP ER AT IO 0.01 N Ta =2 SINGLE NONREPETITIVE 5 * C PLUSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE VCEO MAX COLLECTOR CURRENT I C (A) 10 0.001 0.1 1 10 100 500 COLLECTOR-EMITTER VOLTAGE V CE (V) 2016. 03. 28 Revision No : 3 3/3