2N5551S

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. L 2N5551S EPITAXIAL PLANAR NPN TRANSISTOR E B L FEATURES High Collector Breakdwon Voltage A Low Leakage Current. : ICBO=50nA(Max.) VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA C G : VCBO=180V, VCEO=160V 2 3 1 P P N Low Noise : NF=8dB (Max.) DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 H M 1. EMITTER MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB PC * Tj Tstg RATING 180 160 6 600 100 350 150 -55 150 0.6 ) UNIT V V V mA mA mW 2. BASE 3. COLLECTOR K SOT-23 Marking Lot No. Note : * Package Mounted On 99.5% Alumina 10 8 Type Name ZF 1999. 11. 30 Revision No : 2 J D 1/2 2N5551S ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage * SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) DC Current Gain * hFE(2) hFE(3) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Input Capacitance Small-Signal Current Gain Noise Figure * * VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob Cib hfe NF TEST CONDITION VCB=120V, IE=0 VCB=120V, IE=0, Ta=100 VEB=4V, IC=0 IC=0.1mA, IE=0 IC=1mA, IB=0 IE=10 A, IC=0 VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz VBE=0.5V, IC=0, f=1MHz VCE=10V, IC=1mA, f=1kHz VCE=5V, IC=250 A Rg=1k * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. , f=10Hz 15.7kHz MIN. 180 160 6 80 80 30 100 50 TYP. MAX. 50 50 50 250 0.15 V 0.2 1.0 V 1.0 300 6 20 200 8 dB MHz pF pF UNIT nA A nA V V V 1999. 11. 30 Revision No : 2 2/2