2N7000

SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS(ON). Rugged and reliable. High saturation current capablity. K D E G B 2N7000 N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR C A Voltage controlled small signal switch. N MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed(Note 1) ) SYMBOL VDSS VGSS ID IDP PD Tj Tstg 1% RATING 60 20 500 mA 2000 625 150 -55 150 mW UNIT F H F V L V 1 2 3 M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. SOURCE 2. GATE 3. DRAIN Drain Power Dissipation Junction Temperature Storage Temperature Range Note 1) Pulse Width 10 , Duty Cycle TO-92 EQUIVALENT CIRCUIT D G S PLEASE HANDLE WITH CAUTION. THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse ) TEST CONDITION VGS=0V, ID=10 A VDS=60V, VGS=0V VGS=20V, VDS=0V VGS=-20V, VDS=0V MIN. 60 TYP. MAX. 1 100 -100 UNIT V A nA nA SYMBOL BVDSS IDSS IGSSF IGSSR 2009. 11. 17 Revision No : 2 1/4 2N7000 ELECTRICAL CHARACTERISTICS (Ta=25 ) ON CHARACTERISTICS (Note2) CHARACTERISTIC Gate Threshold Voltage Drain-Source ON Resistance SYMBOL Vth RDS(ON) TEST CONDITION VDS=VGS, ID=250 A VGS=10V, ID=500mA VGS=5V, ID=50mA VGS=10V, ID=500mA VGS=5V, ID=50mA VGS=10V, VDS= 2 VDS(ON) VDS=10V, ID=500mA VGS=0V, IS=200mA (Note1) MIN. 1.1 500 200 TYP. 1.8 1.2 1.5 0.6 0.075 580 0.78 MAX. 2.3 1.8 2.1 0.9 V 0.105 1.15 mA mS V UNIT V Drain-Source ON Voltage On State Drain Current Forward Transconductance Drain-Source Diode Forward Voltage VDS(ON) ID(ON) gFS VSD (Note 2) Pulse Test : Pulse Width 80 , Duty Cycle 1% DYNAMIC CHARACTERISTICS CHARACTERISTIC Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Time Switching Time Turn-Off Time SYMBOL Ciss Crss Coss ton toff VDD=30V, RL=155 , ID=190mA, VGS=10V VDS=25V, VGS=0V, f=1MHz TEST CONDITION MIN. TYP. 47.1 3.5 8.8 8.8 14.8 MAX. nS pF UNIT SWITCHING TIME TEST CIRCUIT V DD t d(on) RL V IN V GS G DUT INPUT, V IN 10% S PULSE WIDTH 50% 50% D V OUT OUTPUT, V OUT t on tr 90% 10% t d(off) t off tf 90% 10% INVERTED 90% 2009. 11. 17 Revision No : 2 2/4 2N7000 I D - V DS 1.5 COMMON SOURCE R DS(ON) - I D DRAIN SOURCE ON- RESISTANCER RDS(ON) (Ω) 5V V 10 6V 6 VGS=3V DRAIN CURRENT ID (A) 1.2 0.9 Ta=25 C 5 4 3 4V 4V 0.6 0.3 0 0 1 2 3 4 5 DRAIN-SOURCE VOLTAGE V DS (V) 2 1 0 0.1 0.2 0.3 10V 6V 5V VGS =3V COMMON SOURCE Ta=25 C 0.4 0.5 0.6 DRAIN CURRENT I D (A) DRAIN SOURCE ON- RESISTANCE RDS (Ω) R DS(ON) - T j 5 4 3 2 1 0 -100 VGS =10V ID =500mA -50 0 50 100 150 DRAIN CURRENT I D (A) 0.9 COMMON SOURCE VGS =10V ID - VGS 0.6 125 C 0.3 -55 C 25 C 0.0 0 1 2 3 4 5 VGS =5V ID =50mA JUNCTION TEMPERATURE T j ( C) GATE-SOURCE VOLTAGE VGS (V) NORMALIZED GATE SOURCE THRESHOLD VOLTAGE Vth (V) V th - T j COMMON SOURCE VDS=VGS ID =250µA I S - V SD REVERSE DRAIN CURRENT I S (A) 1 1.4 1.2 1 0.1 VGS =10 VGS =0 0.8 0.6 -100 0.01 0.0 0.3 0.6 0.9 1.2 1.5 BODY DIODE FORWARD VOLTAGE VSD (V) -50 0 50 100 150 JUNCTION TEMPERATURE T j ( C) 2009. 11. 17 Revision No : 2 3/4 2N7000 C - V DS COMMON SOURCE VGS=0 f=1MHz Ta=25 C VGS - Q g GATE-SOURCE VOLTAGE VGS (V) 10 8 6 4 2 0 0 2 4 6 8 10 COMMON SOURCE VGS=30V ID= 0.3A Ta =25 C 1000 CAPACITANCE C (pF) 100 Ciss Coss 10 Crss 1 0 5 10 15 20 25 DRAIN-SOURCE VOLTAGE V DS (V) GATE CHARGE Q g (nC) SOA 10 DRAIN CURRENT I D (A) 1 0.1 0.01 0.001 0.0001 0.001 PW =1ms PW =10ms PW =100ms DC P D - Ta DRAIN POWER DISSIPATION P D (mW) 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 PW 10 Tj=150 C , Ta=25 C ,Single Pulse 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE V DS (V) AMBIENT TEMPERATURE Ta ( C) 2009. 11. 17 Revision No : 2 4/4