SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION. FEATURES
ESD Protected 2000V. Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity.
K D E G B
2N7000K
N Channel MOSFET ESD Protected 2000V
C
A
High density cell design for low RDS(ON).
N
MAXIMUM RATING (Ta=25
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
)
F
H
F
SYMBOL VDSS VGSS ID IDP PD Tj Tstg 1%
RATING 60 20 500
UNIT
L
V V mA
1
2
3 M
C
DIM A B C D E F G H J K L M N
MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00
J
1. SOURCE 2. GATE 3. DRAIN
Pulsed (Note 1)
2000 625 150 -55 150 mW
Drain Power Dissipation Junction Temperature Storage Temperature Range Note 1) Pulse Width 10 , Duty Cycle
TO-92
EQUIVALENT CIRCUIT
D
G
S
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
)
TEST CONDITION VGS=0V, ID=10 A VDS=60V, VGS=0V VGS=20V, VDS=0V VGS=-20V, VDS=0V MIN. 60 TYP. MAX. 1 10 -10 UNIT V A A A
SYMBOL BVDSS IDSS IGSSF IGSSR
2009. 11. 17
Revision No : 1
1/4
2N7000K
ELECTRICAL CHARACTERISTICS (Ta=25 ) ON CHARACTERISTICS (Note 2)
CHARACTERISTIC Gate Threshold Voltage Drain-Source ON Resistance SYMBOL Vth RDS(ON) TEST CONDITION VDS=VGS, ID=250 A VGS=10V, ID=500mA VGS=5V, ID=50mA VGS=10V, ID=500mA VGS=5V, ID=50mA VGS=10V, VDS= 2 VDS(ON) VDS=10V, ID=500mA VGS=0V, IS=200mA (Note1) MIN. 1.1 500 200 TYP. 1.2 1.5 0.6 0.075 580 760 MAX. 2.35 1.8 2.1 0.9 V 0.105 1150 mA mS mV UNIT V
Drain-Source ON Voltage On State Drain Current Forward Transconductance Drain-Source Diode Forward Voltage Note 2) Pulse Test : Pulse Width 80
VDS(ON) ID(ON) gFS VSD , Duty Cycle 1%
DYNAMIC CHARACTERISTICS
CHARACTERISTIC Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Time Switching Time Turn-Off Time SYMBOL Ciss Crss Coss ton toff VDD=30V, RL=155 , ID=190mA, VGS=10V VDS=25V, VGS=0V, f=1MHz TEST CONDITION MIN. TYP. 52.1 3.9 7.7 11.1 22.5 MAX. nS pF UNIT
SWITCHING TIME TEST CIRCUIT
ton
VDD
RL
td(off)
td(on)
tr 90%
toff tf 90%
VIN
D
VOUT
OUTPUT
VGS G
VOUT 10% INVERTED 90%
50%
S
50%
INPUT
VIN 10% PULSE WIDTH
2009. 11. 17
Revision No : 1
2/4
2N7000K
DRAIN SOURCE ON - RESISTANCE RDS ( )
ID - VDS
1.5 COMMON SOURCE
Ta = 25 C 10V 6V 5V
RDS(ON) - ID
6.0 5.0 4.0 3.0 2.0 1.0
6V 7V 10V 4V 5V VGS = 3V COMMON SOURCE Ta = 25 C
DRAIN CURRENT ID (A)
1.2 0.9 0.6 0.3
VGS = 3V 7V 4V
0.0 0.0
1.0
2.0
3.0
4.0
5.0
0.0 0.1
0.2
0.3
0.4
0.5
0.6
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-CURRENT ID (A)
RDS(ON) - Tj
DRAIN SOURCE ON - RESISTANCE RDS ( ) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150
VGS=10V ID=500mA VGS=5V ID=50mA
Vth - Tj
NORMALIZED GATE SOURCE THRESHOLD VOLTAGE Vth (V) 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -100 -50 0 50 100 150
Common Source VGS=VDS ID=250 µA
JUNCTION TEMPERATURE Tj ( C)
JUNCTION TEMPERATURE Tj ( C)
ID - VGS
COMMON SOURCE VDS =10V
I S - V SD
REVERSE DRAIN CURRENT I S (A) 1
1.0 DRAIN CURRENT ID (A) 0.8 0.6 0.4 0.2 0.0
-55 C 25 C 125 C
VGS=1V
0.1
VGS=0V
0
1
2
3
4
5
0.01 0.0
0.3
0.6
0.9
1.2
1.5
DRAIN-SOURCE VOLTAGE VGS (V)
BODY DIODE FORWARD VOLTAGE VSD (V)
2009. 11. 17
Revision No : 1
3/4
2N7000K
VGS - Q g
GATE-SOURCE VOLTAGE VGS (V) 10 8 6 4 2 0 0 2 4 6 8 10
COMMON SOURCE VDS=30V ID=0.3A Ta=25 C
C - V DS
1000 CAPACITANCE C (pF)
COMMON SOURCE VGS =0V f=1MHz Ta=25 C C iss
100
C oss
10
C rss
1 0 5 10 15 20 25
GATE CHARGE Q g (nC)
DRAIN-SOURCE VOLTAGE V DS (V)
SOA
10 DRAIN CURRENT I D (A) 1 0.1 0.01 0.001 0.0001 0.001
PW =1ms PW =10ms PW =100ms DC
P D - Ta
DRAIN POWER DISSIPATION P D (mW) 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175
PW 10
Tj=150 C , Ta=25 C ,Single Pulse
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE V DS (V)
AMBIENT TEMPERATURE Ta ( C)
2009. 11. 17
Revision No : 1
4/4
很抱歉,暂时无法提供与“2N7000K”相匹配的价格&库存,您可以联系我们找货
免费人工找货