2N7002A

SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS(ON). Voltage controolled small signal switch. Rugged and reliable. A G L 2N7002A N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR E B L DIM A D B C D E G H J K L M N P MILLIMETERS _ 2.93+ 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 High saturation current capablity. 2 3 H 1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Drain-Gate Voltage (RGS Gate-Source Voltage 1 ) ) SYMBOL VDSS VDGR VGSS RATING 60 60 20 115 mA 800 200 150 -55 150 mW UNIT V V V C N P P M 1. SOURCE 2. GATE 3. DRAIN Continuous Drain Current Pulsed Drain Power Dissipation Junction Temperature Storage Temperature Range ID IDP PD Tj Tstg K SOT-23 Marking EQUIVALENT CIRCUIT D J Lot No. Type Name WB G S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse ) TEST CONDITION VGS=0V, ID=10 A VDS=60V, VGS=0V VGS=20V, VDS=0V VGS=-20V, VDS=0V MIN. 60 TYP. MAX. 1 1 -1 UNIT V A A A SYMBOL BVDSS IDSS IGSSF IGSSR 2009. 7. 2 Revision No : 7 1/4 2N7002A ELECTRICAL CHARACTERISTICS (Ta=25 ) ON CHARACTERISTICS (Note 1) CHARACTERISTIC Gate Threshold Voltage Drain-Source ON Resistance SYMBOL Vth RDS(ON) TEST CONDITION VDS=VGS, ID=250 A VGS=10V, ID=500mA VGS=5V, ID=50mA VGS=10V, ID=500mA VGS=5V, ID=50mA VGS=10V, VDS 2 VDS(ON) MIN. 1 500 80 TYP. 2.1 1.8 0.9 320 MAX. 2.5 5 5 2.5 V 0.25 mA mS UNIT V Drain-Source ON Voltage On State Drain Current Forward Transconductance Note 1) Pulse Test : Pulse Width 300 VDS(ON) ID(ON) gFS , Duty Cycle 2.0% VDS=2VDS(ON), ID=200mA DYNAMIC CHARACTERISTICS CHARACTERISTIC Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Time Switching Time Turn-Off Time SYMBOL Ciss Crss Coss ton toff VDD=30V, RL=150 , ID=200mA, VGS=10V, RGEN=25 VDS=25V, VGS=0V, f=1MHz TEST CONDITION MIN. TYP. 20 4 11 MAX. 50 5 25 20 nS 20 pF UNIT DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RAINGS CHARACTERISTIC Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage SYMBOL IS ISM VSD TEST CONDITION VGS=0V, IS=115mA (Note1) MIN. TYP. 0.88 MAX. 115 800 1.5 UNIT mA mA V SWITCHING TIME TEST CIRCUIT V DD t d(on) RL V IN V GS D V OUT OUTPUT, V OUT t on tr 90% 10% t d(off) t off tf 90% 10% INVERTED R GEN G DUT 90% INPUT, V IN 10% S PULSE WIDTH 50% 50% 2009. 7. 2 Revision No : 7 2/4 2N7002A I D - VDS DRAIN SOURCE ON- RESISTANCE R DS(ON) (Ω) (NORMALIZED) 2.0 COMMON SOURCE R DS(ON) - T j 4.0 COMMON SOURCE VGS =10V I D =500mA 9V 10V 8V 7V 6V 5V DRAIN CURRENT ID (A) Ta=25 C 1.5 3.0 1.0 2.0 0.5 4V 1.0 VGS =3V 0 0 1 2 3 4 5 DRAIN-SOURCE VOLTAGE V DS (V) 0 -50 -25 0 25 50 75 100 125 150 JUNCTION TEMPERATURE T j ( C) R DS(ON) - I D DRAIN SOURCE ON- RESISTANCE R DS(ON) (Ω) (NORMALIZED) 3.0 DRAIN CURRENT I D (A) COMMON SOURCE VGS =10V I D - VGS 2.0 1.6 Ta 2.0 1.5 1.0 0.5 0 0.2 0.4 0.6 0.8 0.4 0 0.8 1.0 0 2 4 Ta 6 =2 5 C Ta=25 C 1.2 =-5 Ta =1 2 5 C 8 5 2.5 C COMMON SOURCE VGS =10V 10 DRAIN CURRENT I D (A) GATE-SOURCE VOLTAGE VGS (V) Vth - T j GATE-SOURCE THRESHOLD VOLTAGE V th (NORMALIZED) REVERSE DRAIN CURRENT I S (A) 1.1 COMMON SOURCE I S - V SD 30 10 3 1 0.3 0.1 0.03 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 BODY DIODE FORWARD VOLTAGE VSD (V) COMMON SOURCE VGS =0 1.05 1.0 0.95 0.9 0.85 0.8 -50 -25 0 25 50 VDS =V GS I D =1mA Ta= 125 25 C Ta= 75 100 125 150 JUNCTION TEMPERATURE T j ( C) 2009. 7. 2 Revision No : 7 Ta=-5 5C C 3/4 2N7002A C - V DS GATE-SOURCE VOLTAGE VGS (V) 100 50 CAPACITANCE C (pF) 30 C iss C oss VGS - Q g 10 8 6 4 2 0 0 0.4 0.8 1.2 1.6 2.0 COMMON SOURCE VDS =25V I D =115mA 10 5 3 COMMON SOURCE VGS =0 f=1MHz Ta=25 C C rss 1 1 3 5 10 30 50 DRAIN-SOURCE VOLTAGE V DS (V) GATE CHARGE Q g (nC) I D - V DS DRAIN POWER DISSIPATION PD (mW) 2 DRAIN CURRENT I D (A) 1 0.5 0.3 0.1 0.05 0.03 0.01 0.005 1 SINGLE PULSE VGS =10V Ta=25 C S(O N) P D - Ta 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 100µs 1m S LIM IT RD 10m S 100 mS 1s 10s DC 3 5 10 30 50 100 DRAIN-SOURCE VOLTAGE V DS (V) 2009. 7. 2 Revision No : 7 4/4