2N7002KA-RTK/H

2N7002KA SEMICONDUCTOR N Channel MOSFET ESD Protected 2000V TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES ・ESD Protected 2000V. ・High density cell design for low RDS(ON). E B L ・Voltage controlled small signal switch. L ・High saturation current capablity. 2 A 3 G ・Suffix U : Qualified to AEC-Q101. D ・Rugged and reliable. 1 H ex) 2N7002KA-RTK/HU. MAXIMUM RATING (Ta=25℃) Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous ID 300 Pulsed (Note 1) IDP 1200 (Note 2) PD 350 mW Tj 150 ℃ Tstg -55～150 ℃ Rth(j-a) 357 ℃/W Drain Current Drain Power Dissipation Junction Temperature Storage Temperature Range P P MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 J UNIT K RATING N SYMBOL C CHARACTERISTIC DIM A B C D E G H J K L M N P M 1. SOURCE 2. GATE 3. DRAIN mA SOT-23 Thermal Characteristics Thermal Resistance, Junction-toAmbien (Note2) Note 1) Pulse Width≤10㎲, Duty Cycle≤1% Note 2) Package mounted on 99% Alumina 10×8×0.6mm EQUIVALENT CIRCUIT Marking Lot No. D 2P Type Name G S ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10μA 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 1 μA Gate-Body Leakage, Forward IGSSF VGS=20V, VDS=0V - - 10 μA Gate-Body Leakage, Reverse IGSSR VGS=-20V, VDS=0V - - -10 μA 2000 - - V ESD-Capability* - C=100pF, R=1.5KΩ Both forward and reverse direction 3 pulse *Failure criterion : IDSS > 1μA at VDS=60V, IGSSF>10μA at VGS=20V, IGSSR>-10μA at VGS=-20V. 2021. 04. 15 Revision No : 8 1/3 2N7002KA ELECTRICAL CHARACTERISTICS (Ta=25℃) ON CHARACTERISTICS (Note 3) CHARACTERISTIC SYMBOL Vth Gate Threshold Voltage RDS(ON) Drain-Source ON Resistance VSD Drain-Source Diode Forward Voltage TEST CONDITION MIN. TYP. MAX. UNIT VDS=VGS, ID=250μA 1.1 - 2.35 V VGS=10V, ID=500mA - - 2.3 VGS=5V, ID=50mA - 1.7 2.7 - - 1.15 V MIN. TYP. MAX. UNIT - 18.0 - - 3.0 - - 7.0 - - 850 - VGS=0V, IS=200mA (Note 1) Ω Note 3) Pulse Test : Pulse Width≤80㎲, Duty Cycle≤1% DYNAMIC CHARACTERISTICS CHARACTERISTIC SYMBOL Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Gate Resistance Rg Switching Time TEST CONDITION VDS=25V, VGS=0V, f=1㎒ Turn-On Time ton VDD=30V, RL=155Ω, ID=190㎃, - 15 - Turn-Off Time toff VGS=10V - 40 - pF Ω nS SWITCHING TIME TEST CIRCUIT ton td(on) VDD td(off) tr toff tf 90% 90% RL VIN VOUT D OUTPUT VOUT 10% VGS INVERTED G 90% 50% 50% S INPUT VIN 10% PULSE WIDTH 2021. 04. 15 Revision No : 8 2/3 2N7002KA I D - V DS V 10 COMMON SOURCE 7V 6V DRAIN SOURCE ON- RESISTANCER RDS(ON) (Ω) DRAIN CURRENT ID (A) 1.5 R DS(ON) - I D 5V Ta=25 C 1.2 4V 0.9 0.6 VGS =3V 0.3 0 0 1 2 3 4 5 6 5 VGS=3V 4 3 5V 4V 2 10V 1 0 0.1 DRAIN-SOURCE VOLTAGE V DS (V) COMMON SOURCE Ta=25 C 0.2 0.3 0.6 Ciss 10 0 50 100 Coss Crss 1 -50 150 Frequency=1MHz, VGS=0V 0 10 30 SAFE OPERATION AREA 101 500 400 DRAIN CURRENT ID (A) DRAIN POWER DISSIPATION PD (mW) PD - Ta 300 200 100 100 10us 100us 1ms 10-1 10ms Operation in this area is limited by RDS(ON) 10-2 DC Ta= 25 C Single nonrepetitive pulse 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2021. 04. 15 20 DRAIN-SOURCE VOLTAGE VDS (V) JUNCTION TEMPERATURE T j ( C) 0 0.6 100 CAPACITANCE (pF ) NORMALIZED GATE SOURCE THRESHOLD VOLTAGE Vth 1.0 0.2 -100 0.5 C - V DS COMMON SOURCE VDS=VGS ID =250μA 1.4 0.4 DRAIN CURRENT I D (A) V th - T j 1.8 6V 7V Revision No : 8 175 10-3 -1 10 100 101 102 DRAIN - SOURCE VOLTAGE VDS (V) 3/3