2N7002KA

SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES ・ESD Protected 2000V. ・High density cell design for low RDS(ON). ・Voltage controlled small signal switch. A G L 2N7002KA N Channel MOSFET ESD Protected 2000V E B L DIM A D B C D E G H J K L M N P MILLIMETERS _ 2.93+ 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 ・Rugged and reliable. ・High saturation current capablity. 2 3 H 1 P P CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed (Note 1) Drain Power Dissipation (Note 2) Junction Temperature Storage Temperature Range SYMBOL VDSS VGSS ID IDP PD Tj Tstg RATING 60 ±20 300 UNIT V M 1. SOURCE V mA 2. GATE 3. DRAIN 1200 350 150 -55～150 mW ℃ ℃ K SOT-23 Note 1) Pulse Width≤10㎲, Duty Cycle≤1% Note 2) Package mounted on 99% Alumina 10×8×0.6mm EQUIVALENT CIRCUIT D Marking Lot No. Type Name G 2P S ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse ESD-Capability* SYMBOL BVDSS IDSS IGSSF IGSSR TEST CONDITION VGS=0V, ID=10μ A VDS=60V, VGS=0V VGS=20V, VDS=0V VGS=-20V, VDS=0V C=100pF, R=1.5KΩ Both forward and reverse direction 3 pulse *Failure cirterion : IDSS > 1μ at VDS=60V, IGSSF>10μ at VGS=20V, IGSSR>-10μ at VGS=-20V. A A A MIN. 60 2000 TYP. MAX. 1 10 -10 UNIT V μ A μ A μ A V 2011. 4. 4 Revision No : 1 J MAXIMUM RATING (Ta=25℃) C N 1/3 2N7002KA ELECTRICAL CHARACTERISTICS (Ta=25℃) ON CHARACTERISTICS (Note 3) CHARACTERISTIC Gate Threshold Voltage Drain-Source ON Resistance Drain-Source Diode Forward Voltage SYMBOL Vth RDS(ON) VSD TEST CONDITION VDS=VGS, ID=250μ A VGS=10V, ID=500mA VGS=5V, ID=50mA VGS=0V, IS=200mA (Note 1) MIN. 1.1 TYP. 1.7 MAX. 2.35 2.3 2.7 1.15 Ω V UNIT V Note 3) Pulse Test : Pulse Width≤80㎲, Duty Cycle≤1% DYNAMIC CHARACTERISTICS CHARACTERISTIC Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Time Switching Time Turn-Off Time SYMBOL Ciss Crss Coss ton toff VDD=30V, RL=155Ω, ID=190㎃, VGS=10V VDS=25V, VGS=0V, f=1㎒ TEST CONDITION MIN. TYP. 18.0 3.0 7.0 15 40 MAX. nS pF UNIT SWITCHING TIME TEST CIRCUIT ton VDD RL VIN D VOUT td(off) tr td(on) toff tf 90% 90% OUTPUT VGS G VOUT 10% INVERTED 90% 50% S 50% INPUT VIN 10% PULSE WIDTH 2011. 4. 4 Revision No : 1 2/3 2N7002KA I D - V DS 1.5 COMMON SOURCE R DS(ON) - I D DRAIN SOURCE ON- RESISTANCER RDS(ON) (Ω) 5V V 10 7V 6V 6 5 VGS=3V DRAIN CURRENT ID (A) 1.2 0.9 0.6 Ta=25 C 4V 4 3 2 1 0 0.1 0.2 0.3 4V 5V 6V 7V VGS =3V 0.3 0 0 1 2 3 4 5 DRAIN-SOURCE VOLTAGE V DS (V) 10V COMMON SOURCE Ta=25 C 0.4 0.5 0.6 DRAIN CURRENT I D (A) V th - T j NORMALIZED GATE SOURCE THRESHOLD VOLTAGE Vth (V) 2.5 2.0 1.5 1.0 0.5 0.0 -50 COMMON SOURCE VDS=VGS ID =250µA C - V DS 1000 CAPACITANCE C (pF) 100 Ciss Coss 10 Crss 0 50 100 150 1 0.0 0.3 0.6 0.9 1.2 1.5 JUNCTION TEMPERATURE T j ( C) DRAIN-SOURCE VOLTAGE V DS (V) PD - Ta DRAIN POWER DISSIPATION PD (mW) 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2011. 4. 4 Revision No : 1 3/3