S EMICONDUCTOR
MARKING SPECIFICATION
BAV21W
USC PACKAGE
1. Marking method
Laser Marking
2. Marking
2
HU
1
No. ① ②
Item Device Mark hFE Grade * Lot No.
Marking HU 01
01
Description BAV21W 2006. 1st Week [0:1st Character, 1:2nd Character]
5 (E) E (5) 6 (F) F (6) Periode (Year)
Note) * Lot No. marking method
Character arrangement Year
1 st Character 2nd Character
1 (A) A (1)
2 (B) B (2)
3 (C) C (3)
4 (D) D (4)
7 (G) G (7)
8 (H) H (8)
9 (I) I (9) Remark
0 (J) J (0)
Marking (Week) 01 0A J1 JA 02 0B J2 JB … … … … 51 5A E1 EA 52 5B E2 EB
1 st Year (2006) 2 nd Year (2007) 3 rd Year (2008) 4 th Year (2009)
2006-2010-2014... 2007-2011-2015... Rotation for 4 years 2008-2012-2016... 2009-2013-2017...
2008. 9. 11
Revision No : 1
1/1
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