BAV23C

SEMICONDUCTOR TECHNICAL DATA High Voltage Switching. FEATURES ・Low Leakage Current. ・Repetitive Peak Reverse Voltage : VRRM≦250V. ・Low Capacitance : CT≦2pF. 2 L BAV23C SILICON EPITAXIAL PLANAR DIODE E B L DIM A D B C D E G H J K MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 3 A G H 1 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Single diode loaded. Forward Current Double diode loaded. t = 1μ s Surge Current (Square wave) Power Dissipation Junction Temperature Storage Temperature Range t = 100μ s t = 10ms PD Tj Tstg IFSM SYMBOL RATING VRM VR IFM IF 250 200 625 225 mA 125 9 3 1.7 250* 150 -55～150 A A A mW ℃ ℃ Type Name P P L M N P UNIT V V mA C N M 3 1. ANODE 1 2. ANODE 2 3. CATHODE 2 1 K SOT-23 Marking J Lot No. Note : * Device mounted on a FR4 Printed-Circuit Board (PCB) U4 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Forward Voltage SYMBOL VF TEST CONDITION IF=100mA IF=200mA VR=200V VR=200V, Tj=150℃ VR=0V, f=1MHz IF=10mA, IR=10mA, IRM=1mA MIN. TYP. MAX. 1.0 V 1.25 0.1 100 2 50 μ A pF ns UNIT Reverse Current Total Capacitance Reverse Recovery Time IR CT trr 2009. 5. 15 Revision No : 1 1/2 BAV23C IF - VF 500 102 IR - V R FORWARD CURRENT IF (mA) 400 150 C -40 C REVERSE CURRENT IR (µA) 101 1 10-1 10-2 10-3 10-4 10-5 10-6 0 50 100 150 200 150 C 85 C 300 200 25 C 25 C 100 0 85 C -40 C 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 250 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) CT - VR TERMINAL CAPACITANCE CT (pF) 1.2 1 0.8 0.6 0.4 0.2 0 250 IF - Ta FORWARD CURRENT IF (mA) 200 150 100 50 0 Single Double 0 5 10 15 20 25 30 0 50 100 150 REVERSE VOLTAGE VR (V) AMBIENT TEMPERATURE Ta ( C) Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT INPUT WAVEFORM 0 INPUT 0.01µF DUT OUTPUT SAMPLING OSCILLOSCOPE (RIN =50Ω) IF 0 IR WAVEFORM 0.1 I R 50Ω 2kΩ -6V 50ns E t rr PULSE GENERATOR (R OUT =50Ω) 2009. 5 .15 Revision No : 1 50Ω 2/2