BAV23S

SEMICONDUCTOR TECHNICAL DATA High Voltage Switching. FEATURES ・High Reliability. ・Small surface mounting type (SOT-23). 2 A G H 1 L BAV23S SILICON EPITAXIAL PLANAR DIODE E B L DIM A D B C D E G H J MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 3 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Continuous Forward Current Surge Current (10mS) Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VRM VR IF IFSM PD Tj Tstg RATING 300 250 200 2 225* mW 300** 150 -55～150 ℃ ℃ UNIT V C N P P K L M N P V mA A 1. CATHODE 1 2. ANODE 2 3. ANODE 1/ CATHODE 2 M K J 3 2 1 SOT-23 * Note1 : Package Mounted On FR-5 Board (25.4×19.05×1.57mm) ** Note2 : Package Mounted On 99.5% Alumina (10×8×0.6mm) Marking Type Name Lot No. JC ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time SYMBOL VF IR(1) IR(2) CT trr TEST CONDITION IF=150mA VR=250V VR=300V VR=0V, f=1MHz IR=30mA, IF=30mA MIN. TYP. MAX. 1.25 0.2 100 3 100 UNIT V μ A pF nS 2009. 1. 23 Revision No : 1 1/2 BAV23S I F - VF 10 5 10 4 10 3 10 2 10 1 0.1 0.01 0.001 0.0001 0 200 400 600 800 1000 1200 Ta=25 C IR - VR 100 REVERSE CURRENT I R (nA) Ta=25 C FORWARD CURRENT I F (µA) 10 1 0.1 0 50 100 150 200 250 300 FORWARD VOLTAGE VF (mV) REVERSE VOLTAGE VR (V) C T - VR TERMINAL CAPACITANCE C T (pF) 1.5 1.4 1.3 1.2 1.1 1.0 f=1MHz Ta=25 C 0 10 20 30 REVERSE VOLTAGE VR (V) 2009. 1. 23 Revision No : 1 2/2