BAV70

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION FEATURES ・Small Package : SOT-23. ・Low Forward Voltag : VF=0.9V(Typ.). ・Fast Reverse Recovery Time : trr=1.6ns(Typ.). A G L E B BAV70 SILICON EPITAXIAL PLANAR DIODE L DIM A 2 MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 ・Small Total Capacitance : CT=0.9pF(Typ.). 3 D B C D E G H J K H 1 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Continuous Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VRM VR IF IFSM PD Tj Tstg RATING 85 80 250 2 225* mW 300** 150 -55～150 ℃ ℃ UNIT V V mA A C N P P L M N P M 3 1. ANODE 1 2. ANODE 2 3. CATHODE 2 1 K SOT-23 * Note1 : Package Mounted On FR-5 Board (25.4×19.05×1.57mm) ** Note2 : Package Mounted On 99.5% Alumina (10×8×0.6mm) Marking J Lot No. Type Name H7 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance Reverse Recovery Time IR CT trr IF=1mA IF=10mA IF=150mA VR=80V VR=0, f=1MHz IF=10mA TEST CONDITION MIN. TYP. 0.60 0.72 MAX. 1.25 0.5 3.0 4.0 μ A pF nS V UNIT 2009. 1. 23 Revision No : 1 1/2 BAV70 I F - VF 10 FORWARD CURRENT I F (mA) 10 10 C Ta =2 Ta 5 C =-2 5 C 0 3 I R - VR 10 REVERSE CURRENT I R (µA) Ta=100 C Ta=75 C 2 1 1 10 10 -1 Ta = 10 10 -1 Ta=50 C -2 10 Ta=25 C -2 0 0.2 0.4 0.6 0.8 1.0 1.2 10 -3 0 20 40 60 80 FORWARD VOLTAGE V F (V) REVERSE VOLTAGE VR (V) C T - VR REVERSE RECOVERY TIME t rr (ns) 2.0 TOTAL CAPACITANCE CT (pF) 1.6 1.2 0.8 0.4 0 f=1MHz Ta=25 C t rr 100 50 30 - IF Ta=25 C Fig. 1 10 5 3 1 0.5 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 REVERSE VOLTAGE VR (R) FORWARD CURRENT I F (mA) Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT INPUT WAVEFORM 0 INPUT 0.01µF DUT OUTPUT SAMPLING OSCILLOSCOPE (RIN =50Ω) I F =10mA 0 IR WAVEFORM 0.1 I R 50Ω 2kΩ -6V 50ns E t rr PULSE GENERATOR (R OUT =50Ω) 2009. 1. 23 Revision No : 1 50Ω 2/2