BAV70T

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Package ・Low Forward Voltage ・Fast Reverse Recovery Time ・Small Total Capacitance BAV70T SILICON EPITAXIAL PLANAR DIODE : ESM. : VF=0.9V (Typ.). : trr=1.6ns(Typ.). A G H 2 1 E B D 3 DIM A B C D E G H J : CT=0.9pF (Typ.). MILLIMETERS _ 1.60 + 0.10 _ 0.85 + 0.10 _ 0.70 + 0.10 0.27+0.10/-0.05 _ 1.60 + 0.10 _ 1.00 + 0.10 0.50 _ 0.13 + 0.05 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Continuous Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VRM VR IF IFSM PD Tj Tstg RATING 85 80 150 2 200 * 150 -55～150 UNIT V 1. ANODE 1 3 V mA A mW ℃ ℃ C MAXIMUM RATING (Ta=25℃) J 2. ANODE 2 3. CATHODE 2 1 ESM Note : * Package Mounted On FR-5 Board (25.4×19.05×1.57mm) Marking H2 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance Reverse Recovery Time IR CT trr TEST CONDITION IF=1mA IF=10mA IF=150mA VR=80V VR=0, f=1MHz IF=10mA MIN. TYP. 0.60 0.72 MAX. 1.25 0.5 3.0 4.0 μ A pF nS V UNIT 2009. 1. 23 Revision No : 1 1/2 BAV70T IF - VF 10 FORWARD CURRENT I F (mA) 10 10 C Ta =2 Ta 5 C =-2 5 C 0 3 IR - VR 10 REVERSE CURRENT I R (µA) Ta=100 C Ta=75 C 2 1 1 10 10 -1 Ta = 10 10 -1 Ta=50 C -2 10 Ta=25 C -2 0 0.2 0.4 0.6 0.8 1.0 1.2 10 -3 0 20 40 60 80 FORWARD VOLTAGE V F (V) REVERSE VOLTAGE VR (V) C T - VR REVERSE RECOVERY TIME t rr (ns) 2.0 TOTAL CAPACITANCE CT (pF) 1.6 1.2 0.8 0.4 0 f=1MHz Ta=25 C t rr - I F 100 50 30 Ta=25 C Fig. 1 10 5 3 1 0.5 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 REVERSE VOLTAGE VR (R) FORWARD CURRENT I F (mA) Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT INPUT WAVEFORM 0 INPUT 0.01µF DUT OUTPUT SAMPLING OSCILLOSCOPE (RIN =50Ω) I F =10mA 0 IR WAVEFORM 0.1 I R 50Ω 2kΩ -6V 50ns E t rr PULSE GENERATOR (R OUT =50Ω) 2009. 1. 23 Revision No : 1 50Ω 2/2